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Title: Transmissive metallic contact for amorphous silicon solar cells

Patent ·
OSTI ID:5420981

A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

Research Organization:
Solar Energy Research Inst. (SERI), Golden, CO (United States)
DOE Contract Number:
AC02-83CH10093
Assignee:
Dept. of Energy
Application Number:
ON: DE85017724
OSTI ID:
5420981
Country of Publication:
United States
Language:
English