Damage formed by ion implantation in silicon evaluated by displaced atom density and thermal wave signal
- Electrical Engineering, Hosei University, Koganei, Tokyo 184, Japan (JP)
- Therma Wave Inc., 47320 Mission Falls Court, Fremont, California 94539
- Siltec Corporation, 190 Independent Drive, Menlo Park, California 94025-1197
- National Semiconductor Corporation, 2900 Semiconductor Drive, Santa Clara, California 95051
- Integrated Device Technology, Inc., 3236 Scott Boulevard, Santa Clara,
Damage formed by BF{sup +}{sub 2} and As{sup +} implantations in Si was evaluated quantitatively. The density of displaced atoms ({ital D}{sub da}) was determined from 1.5 MeV He{sup +} Rutherford backscattering spectrometery. {ital D}{sub da} increased from 4.7{times}10{sup 16} to 1.6{times}10{sup 17} cm{sup {minus}2} with the dose increased from 6.0{times}10{sup 13} to 1.3{times}10{sup 14} cm{sup {minus}2}. However, {ital D}{sub da} saturates at around 4{times}10{sup 17} cm{sup {minus}2} for all doses above 5{times}10{sup 14} cm{sup {minus}2}. The thermal wave signal intensity shows the same dose dependence as {ital D}{sub da}. This result shows that thermal wave signal intensity has a close relation with the density of displaced atoms formed by ion implantation. Therefore, quantitative damage monitorings can be achieved by thermal wave intensity measurements. Also, the variation of thermal wave signal intensity with ion implant energy was studied.
- OSTI ID:
- 5418874
- Journal Information:
- Applied Physics Letters; (USA), Vol. 55:13; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Amorphization processes in ion implanted Si: Ion species effects
Elevated-temperature 3-MeV Si and 150-keV Ge implants in InP:Fe