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Title: Silicon dimethylamido complexes and ammonia as precursors for the atmospheric pressure chemical vapor deposition of silicon nitride thin films

Abstract

Silicon nitride thin films are widely used in the microelectronics industry as diffusion barriers, passivation layers, and the active charge storage elements in metal-nitride-oxide semiconductor nonvolatile memory products. Silicon nitride films are normally prepared either by atmospheric pressure chemical vapor deposition (APCVD) using silane and ammonia as precursors or by low-pressure chemical vapor deposition (LPCVD) using dichlorosilane and ammonia. Herein, the authors report the successful APCVD preparation of high-quality silicon nitride coatings using silicon dimethylamido complexes, Si(NMe{sub 2}){sub n}H{sub 4-n} (n = 2-4), and ammonia as precursors. The films have been deposited at 600-750{degree}C with growth rates from 50 to 550 {angstrom}/min.

Authors:
; ;  [1]
  1. Harvard Univ., Cambridge, MA (USA)
OSTI Identifier:
5412057
Resource Type:
Journal Article
Journal Name:
Chemistry of Materials; (United States)
Additional Journal Information:
Journal Volume: 2:5; Journal ID: ISSN 0897-4756
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; THIN FILMS; CHEMICAL VAPOR DEPOSITION; AMMONIA; ATMOSPHERIC PRESSURE; EXPERIMENTAL DATA; MEASURING METHODS; SILICON NITRIDES; CHEMICAL COATING; DATA; DEPOSITION; FILMS; HYDRIDES; HYDROGEN COMPOUNDS; INFORMATION; NITRIDES; NITROGEN COMPOUNDS; NITROGEN HYDRIDES; NUMERICAL DATA; PNICTIDES; SILICON COMPOUNDS; SURFACE COATING; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats

Gordon, R G, Hoffman, D M, and Riaz, U. Silicon dimethylamido complexes and ammonia as precursors for the atmospheric pressure chemical vapor deposition of silicon nitride thin films. United States: N. p., Web. doi:10.1021/cm00011a002.
Gordon, R G, Hoffman, D M, & Riaz, U. Silicon dimethylamido complexes and ammonia as precursors for the atmospheric pressure chemical vapor deposition of silicon nitride thin films. United States. https://doi.org/10.1021/cm00011a002
Gordon, R G, Hoffman, D M, and Riaz, U. . "Silicon dimethylamido complexes and ammonia as precursors for the atmospheric pressure chemical vapor deposition of silicon nitride thin films". United States. https://doi.org/10.1021/cm00011a002.
@article{osti_5412057,
title = {Silicon dimethylamido complexes and ammonia as precursors for the atmospheric pressure chemical vapor deposition of silicon nitride thin films},
author = {Gordon, R G and Hoffman, D M and Riaz, U},
abstractNote = {Silicon nitride thin films are widely used in the microelectronics industry as diffusion barriers, passivation layers, and the active charge storage elements in metal-nitride-oxide semiconductor nonvolatile memory products. Silicon nitride films are normally prepared either by atmospheric pressure chemical vapor deposition (APCVD) using silane and ammonia as precursors or by low-pressure chemical vapor deposition (LPCVD) using dichlorosilane and ammonia. Herein, the authors report the successful APCVD preparation of high-quality silicon nitride coatings using silicon dimethylamido complexes, Si(NMe{sub 2}){sub n}H{sub 4-n} (n = 2-4), and ammonia as precursors. The films have been deposited at 600-750{degree}C with growth rates from 50 to 550 {angstrom}/min.},
doi = {10.1021/cm00011a002},
url = {https://www.osti.gov/biblio/5412057}, journal = {Chemistry of Materials; (United States)},
issn = {0897-4756},
number = ,
volume = 2:5,
place = {United States},
year = {},
month = {}
}