Growth of GaN single crystals and properties of homoepitaxial MOCVD layers
Conference
·
OSTI ID:541070
- Univ. of Warsaw (Poland). Inst. of Experimental Physics
- Polish Academy of Sciences, Warsaw (Poland). High Pressure Research Center
Recently high quality GaN plates have been grown from the solution in liquid gallium at N{sub 2} pressure up to 20 kbar and temperature close to 1,600 C. These single crystals have been used as substrates for homoepitaxial growth of GaN layer by MOCVD. The influence of the polarity of the Ga or N terminated surface of the substrate on the quality of the homoepitaxial layer is discussed. The structural and optical properties of homoepitaxial layers are presented and discussed.
- OSTI ID:
- 541070
- Report Number(s):
- CONF-960450-; ISBN 0-7803-3179-6; TRN: IM9747%%176
- Resource Relation:
- Conference: 10. international parallel processing symposium, Honolulu, HI (United States), 15-19 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Semiconducting and insulating materials 1996: Proceedings; PB: [395] p.
- Country of Publication:
- United States
- Language:
- English
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