Simulation of effects of uniaxial stress on the deep level transient spectroscopy spectra of the DX center in AlGaAs alloys

Journal Article · Mon Sep 02 00:00:00 EDT 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.105501· OSTI ID:5409980

Li, M ^[1]; Yu, P Y ^[2]; Weber, E R ^[3]

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1. Department of Physics and Department of Materials Science and Mineral Engineering, University of California, Berkeley, California (USA)
2. Department of Physics, University of California, Berkeley, California (USA) Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California (USA)
3. Department of Materials Science and Mineral Engineering, University of California, Berkeley, California (USA) Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California (USA)

Recently the effect of uniaxial stress on the deep level transient spectroscopy (DLTS) of the {ital DX} center in AlGaAs alloys have been reported by two separate groups. In both experiments no splitting of the DLTS peak was observed. We have analyzed the experimental results in terms of a large lattice relaxation model in which the {ital DX} center can have either a positive or a negative Coulomb energy {ital U}. We found that if the symmetry of the {ital DX} center depended on its charge state then its DLTS peak was not split by uniaxial stress in contrast to other defects with large lattice relaxation (such as the {ital A} center in Si).

• OSTI ID: 5409980
• Journal Information: Applied Physics Letters; (United States), Vol. 59:10; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
DEEP LEVEL TRANSIENT SPECTROSCOPY
STRESS RELAXATION
SIMULATION
GALLIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
PNICTIDES
RELAXATION
SPECTROSCOPY
360603* - Materials- Properties