Correlation between the oxidation state of {alpha}-SiC and its wettability with non-reactive (Sn) or reactive (Ni) metallic components and their binary Si-alloys
- Univ. of Patras (Greece). Dept. of Chemical Engineering
Wetting experiments were performed on {alpha}-SiC/Sn (505 K < T < 1873 K) and {alpha}-SiC/Ni (T = 1,773 K) in an argon atmosphere with 700 vpm moisture. Wettability and reactivity of {alpha}-SiC with both metallic components were affected by the oxidation state of {alpha}-SiC. Under the experimental conditions, passive to active transition of {alpha}-SiC occurs at {approximately}1,600 K. Up to 1,600 K, wettability between liquid Sn and {alpha}-SiC is governed by a passive SiO{sub 2}-film overlaying {alpha}-SiC, while at higher temperatures an increased carbon surface concentration, leads to higher contact angle values. Under the present experimental conditions the start of reactivity between Ni and {alpha}-SiC coincides with the passive to active transition of {alpha}-SiC. The presence of silicon at the ceramic-metal interface, in the form of alloying element into both Sn or Ni, was found to decrease the temperature of passive to active transition of {alpha}-SiC, to improve the wettability for both {alpha}-SiC/Sn and {alpha}-SiC/Ni, and to suppress the interfacial reaction between Ni and {alpha}-SiC.
- OSTI ID:
- 540940
- Journal Information:
- Acta Materialia, Vol. 45, Issue 9; Other Information: PBD: Sep 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
Phase reaction and diffusion path of the SiC/Ti system
Wettability of low temperature solder alloys for step-soldering