Photosensitivity enhancement by H- and He-ion implantation in lead lanthanum zirconate titanate ceramics

Journal Article · Tue Jul 01 00:00:00 EDT 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91694· OSTI ID:5407791

Land, C E; Peercy, P S

H- and He-ion implantation has been used to increase the photoferroelectric image storage sensitivity of lead lanthanum zirconium titanate ceramics by factors of approx.10 and approx.30, respectively. The increased photosensitivity can be attributed primarily to implantation-produced disorder, which increases the efficiency of carrier photoexcitation and trapping and reduces the exposure energy required to establish nonvolatile space-charge fields. Implantation-induced disorder may also contribute to a substantial increase in photoconductivity in the ion-damaged near-surface region.

• Research Organization: Sandia Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: DE-AC04-76-DP00789
• OSTI ID: 5407791
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 37:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CERAMICS
ION IMPLANTATION
PHOTOSENSITIVITY
LANTHANUM COMPOUNDS
LEAD COMPOUNDS
TITANATES
ZIRCONIUM COMPOUNDS
CHARGE CARRIERS
DAMAGE
EFFICIENCY
ELECTRIC FIELDS
EXCITATION
IMAGES
PHOTOCONDUCTIVITY
SPACE CHARGE
SURFACES
TRAPPING
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ENERGY-LEVEL TRANSITIONS
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RARE EARTH COMPOUNDS
SENSITIVITY
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360204* - Ceramics
Cermets
& Refractories- Physical Properties