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Title: Method for enhancement of useful luminescence from vacancy defects in refractory oxides for tunable lasers and the refractory oxides produced thereby

Patent Application ·
OSTI ID:5401658

Refractory oxide crystals suitable for use in tunable lasers and a method for preparing the same are provided. The crystals are characterized by high quantum efficiency, high thermal stability, good crystal transparency, and a high percentage of useful luminescence. The method for preparation of the crystals involves removing substantially all the hydrogen, thermochemically reducing the crystal's oxygen content to produce oxygen (anion) vacancy defects, and subsequently irradiating the crystal with electrons to inactivate trace H{sup minus} ions so that an increased amount of short lived F{sup +} luminescence is produced when the crystal is optically excited.

Research Organization:
Oak Ridge National Lab., TN (United States)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
AC05-84OR21400
Assignee:
Dept. of Energy
Patent Number(s):
PATENTS-US-A7243534
Application Number:
ON: DE91017340; PPN: US 7-243534
OSTI ID:
5401658
Country of Publication:
United States
Language:
English