Band alignments in GaInP/GaP/GaAs/GaP/GaInP quantum wells

Journal Article · Fri Aug 01 00:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119742· OSTI ID:538378

Kwok, S H; Yu, P Y ^[1]; Uchida, K; Arai, T ^[2]

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1. Department of Physics, University of California, Berkeley, California 94720 (United States)
2. Tsukuba Laboratories, Nippon Sanso Company, 10 Ohkubo, Tsukuba, Ibaraki, 300-33 (Japan)

Pressure-dependent photoluminescence (PL) in several GaInP(ordered)-GaAs quantum well structures grown by metal organic vapor phase epitaxy is reported. Quantum well emission from GaAs is observed only in structures where thin ({approximately}2nm) GaP layers are inserted between the GaAs well and the GaInP barrier. By extrapolating the energies of the various inter and intralayer PL transitions observed under pressures (up to 5.5 GPa) to zero pressure, the different band offsets of the heterostructure have been determined. {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 538378
• Journal Information: Applied Physics Letters, Vol. 71, Issue 8; Other Information: PBD: Aug 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHOTOLUMINESCENCE
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
VAPOR PHASE EPITAXY
PRESSURE DEPENDENCE
VERY HIGH PRESSURE
HETEROJUNCTIONS