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Title: Thin films of layered-structure (1{minus}x)SrBi{sub 2}Ta{sub 2}O{sub 9}{minus}xBi{sub 3}Ti(Ta{sub 1{minus}y}Nb{sub y})O{sub 9} solid solution for ferroelectric random access memory devices

Abstract

We report on the thin films of solid{endash}solution material (1{minus}x)SrBi{sub 2}Ta{sub 2}O{sub 9}{minus}xBi{sub 3}Ti(Ta{sub 1{minus}y}Nb{sub y})O{sub 9} fabricated by a modified metalorganic solution deposition technique for ferroelectric random access memory devices. Using the modified technique, it was possible to obtain the pyrochlore free crystalline thin films at an annealing temperature as low as 600{degree}C. The solid{endash}solution of layered perovskite materials helped us to significantly improve the ferroelectric properties, higher P{sub r} and higher T{sub c}, compared to SrBi{sub 2}Ta{sub 2}O{sub 9}; a leading candidate material for memory applications. For example, the films with 0.7 SrBi{sub 2}Ta{sub 2}O{sub 9}{endash}0.3Bi{sub 3}TiTaO{sub 9} composition and annealed in the temperature range 650{endash}750{degree}C exhibited 2P{sub r} and E{sub c} values in the range 12.4{endash}27.8 {mu}C/cm{sup 2} and 68{endash}80 kV/cm, respectively. The leakage current density was lower than 10{sup {minus}8} A/cm{sup 2} at an applied electric field of 200 kV/cm. The films exhibited good fatigue characteristics under bipolar stressing. {copyright} {ital 1997 American Institute of Physics.}

Authors:
; ; ;  [1]
  1. Department of Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061-0237 (United States)
Publication Date:
OSTI Identifier:
538373
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 71; Journal Issue: 8; Other Information: PBD: Aug 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FERROELECTRIC MATERIALS; MEMORY DEVICES; PYROCHLORE; THIN FILMS; STRONTIUM COMPOUNDS; BISMUTH COMPOUNDS; TITANIUM COMPOUNDS; ANNEALING; PERMITTIVITY; STRONTIUM OXIDES; BISMUTH OXIDES; TANTALUM OXIDES; NIOBIUM OXIDES; TITANIUM OXIDES; SOLID SOLUTIONS; PEROVSKITES; LEAKAGE CURRENT

Citation Formats

Desu, S B, Joshi, P C, Zhang, X, and Ryu, S O. Thin films of layered-structure (1{minus}x)SrBi{sub 2}Ta{sub 2}O{sub 9}{minus}xBi{sub 3}Ti(Ta{sub 1{minus}y}Nb{sub y})O{sub 9} solid solution for ferroelectric random access memory devices. United States: N. p., 1997. Web. doi:10.1063/1.119721.
Desu, S B, Joshi, P C, Zhang, X, & Ryu, S O. Thin films of layered-structure (1{minus}x)SrBi{sub 2}Ta{sub 2}O{sub 9}{minus}xBi{sub 3}Ti(Ta{sub 1{minus}y}Nb{sub y})O{sub 9} solid solution for ferroelectric random access memory devices. United States. https://doi.org/10.1063/1.119721
Desu, S B, Joshi, P C, Zhang, X, and Ryu, S O. Fri . "Thin films of layered-structure (1{minus}x)SrBi{sub 2}Ta{sub 2}O{sub 9}{minus}xBi{sub 3}Ti(Ta{sub 1{minus}y}Nb{sub y})O{sub 9} solid solution for ferroelectric random access memory devices". United States. https://doi.org/10.1063/1.119721.
@article{osti_538373,
title = {Thin films of layered-structure (1{minus}x)SrBi{sub 2}Ta{sub 2}O{sub 9}{minus}xBi{sub 3}Ti(Ta{sub 1{minus}y}Nb{sub y})O{sub 9} solid solution for ferroelectric random access memory devices},
author = {Desu, S B and Joshi, P C and Zhang, X and Ryu, S O},
abstractNote = {We report on the thin films of solid{endash}solution material (1{minus}x)SrBi{sub 2}Ta{sub 2}O{sub 9}{minus}xBi{sub 3}Ti(Ta{sub 1{minus}y}Nb{sub y})O{sub 9} fabricated by a modified metalorganic solution deposition technique for ferroelectric random access memory devices. Using the modified technique, it was possible to obtain the pyrochlore free crystalline thin films at an annealing temperature as low as 600{degree}C. The solid{endash}solution of layered perovskite materials helped us to significantly improve the ferroelectric properties, higher P{sub r} and higher T{sub c}, compared to SrBi{sub 2}Ta{sub 2}O{sub 9}; a leading candidate material for memory applications. For example, the films with 0.7 SrBi{sub 2}Ta{sub 2}O{sub 9}{endash}0.3Bi{sub 3}TiTaO{sub 9} composition and annealed in the temperature range 650{endash}750{degree}C exhibited 2P{sub r} and E{sub c} values in the range 12.4{endash}27.8 {mu}C/cm{sup 2} and 68{endash}80 kV/cm, respectively. The leakage current density was lower than 10{sup {minus}8} A/cm{sup 2} at an applied electric field of 200 kV/cm. The films exhibited good fatigue characteristics under bipolar stressing. {copyright} {ital 1997 American Institute of Physics.}},
doi = {10.1063/1.119721},
url = {https://www.osti.gov/biblio/538373}, journal = {Applied Physics Letters},
number = 8,
volume = 71,
place = {United States},
year = {1997},
month = {8}
}