Pair-groove-substrate GaAs/AlGaAs multiquantum well lasers by molecular beam epitaxy

Journal Article · Tue Oct 01 00:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96018· OSTI ID:5382789

Mannoh, M; Yuasa, T; Naritsuka, S; Shinozaki, K; Ishii, M

We investigated molecular beam epitaxial growth characteristics on (001) GaAs substrates with a pair of etched grooves along the <110> direction. It is found that, as the growth proceeds, the mesa width between the pair of grooves gradually decreases and that the grown mesa surface becomes slightly concave. These results offer great advantages for precisely defining the lateral width of index guided lasers during growth. A pair-groove-substrate GaAs/AlGaAs multiquantum well laser has been newly developed, which shows stable fundamental transverse mode oscillation and a high external differential quantum efficiency of 68% as well as a low threshold current of 23 mA.

• Research Organization: Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 211, Japan
• OSTI ID: 5382789
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 47:7
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR LASERS
FABRICATION
ALUMINIUM ARSENIDES
ETCHING
EXPERIMENTAL DATA
OSCILLATION MODES
QUANTUM EFFICIENCY
STABILITY
THRESHOLD CURRENT
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
EPITAXY
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)