Simulating growth of Mo/Si multilayers

Journal Article · Mon Sep 02 00:00:00 EDT 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.105495· OSTI ID:5364666

Morgan, W L ^[1]; Boercker, D B ^[2]

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1. Kinema Research, 18720 Autumn Way, Monument, Colorado (USA)
2. Lawrence Livermore National Laboratory, P. O. Box 808 L-299, Livermore, California (USA)

Multilayer structures of alternating thin layers of molybdenum and silicon are of great interest as x-ray optics components and a considerable amount of effort has been expended in their development. The efficiencies of these structures depend upon both the accurate control of the layer thicknesses and the sharpness in the interface between layers. High- resolution electron microscopy reveals that the interface created by deposition of Mo on Si is much more diffuse than that produced by depositing Si on Mo. We have used molecular dynamics to simulate the deposition processes and observe significant penetration of the Si substrates by the incident Mo atoms, while incident Si atoms remain on the surface of the Mo substrate.

• OSTI ID: 5364666
• Journal Information: Applied Physics Letters; (United States), Vol. 59:10; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
COMPUTERIZED SIMULATION
MOLECULAR BEAM EPITAXY
MOLYBDENUM
SILICON
INTERFACES
SPUTTERING
THICKNESS
THIN FILMS
CHEMICAL COATING
DEPOSITION
DIMENSIONS
ELEMENTS
EPITAXY
FILMS
METALS
SEMIMETALS
SIMULATION
SURFACE COATING
TRANSITION ELEMENTS
360101* - Metals & Alloys- Preparation & Fabrication
360601 - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies