Investigations on low-temperature MOVPE growth of InGaAs/InP using alternative sources (TBAs, TBP)
Conference
·
OSTI ID:536292
- Inst. of Electronic Materials Technology, Warsaw (Poland)
- Alcatel SEL, Stuttgart (Germany). Research Center
Growth of high quality InP and InGaAs using the less hazardous liquid group V precursors, TBAs and TBP has been achieved. A systematic study compares the quality of InP and InGaAs epitaxial layers grown by low-pressure organometallic vapor phase epitaxy (MOVPE) using TMG and TEG trimethylindium (TMIn), phosphine (PH{sub 3}), arsino (AsH{sub 3}) and tetriarybutylophosphine (TBP) and tertriarybutylarsin (TBAs) sources. High quality InP Layers are obtained with both phosphorus sources for growth at high V/III ratio and at low temperatures with the TBP, TBAs sources than with the phosphine and arsine sources.
- OSTI ID:
- 536292
- Report Number(s):
- CONF-960498-; ISBN 0-7803-3283-0; TRN: IM9745%%131
- Resource Relation:
- Conference: 8. international conference on indium phosphide and related materials, Schwaebisch-Gmuend (Germany), 21-25 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Indium phosphide and related materials 1996: Proceedings; PB: 799 p.
- Country of Publication:
- United States
- Language:
- English
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