Roughness on resonant tunneling characteristics
- NTT LSI Labs., Atsugi, Kanagawa (Japan)
In GaAs/InAlAs heterostructures lattice-matched to InP have emerged as an important material system for electrical and optical devices. The interface roughness for In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As on InP was investigated using AFM to observe the surface morphology after growing each layer. The interface (InGaAs on InP) is relatively smooth and does not have 2D islands, but the interface on InGaAs is microscopically rough and has 2D islands 10--25 nm wide. Moreover, at the interface on InAlAs a high density of microscopic islands less than 10 nm wide are formed and the interface is so pseudosmooth that the steps are not distinguished. These morphologies, especially those of InGaAs, are affected by the substrate misorientation angles. The roughness of the interface on InGaAs was greater when the heterostructure was grown on a misoriented substrate because the growth mode changed from the mixture of step-flow and 2D-nucleation growth to a step-bunching and 3D growth. The I{sub p}/I{sub v} ratio and I{sub p} of RTDs with a pseudosmooth interface (grown on the nominally oriented substrate) were remarkably better than those of RTDs with a rough interface (grown on the 1{degree}-misoriented substrate).
- OSTI ID:
- 536244
- Report Number(s):
- CONF-960498-; ISBN 0-7803-3283-0; TRN: IM9745%%83
- Resource Relation:
- Conference: 8. international conference on indium phosphide and related materials, Schwaebisch-Gmuend (Germany), 21-25 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Indium phosphide and related materials 1996: Proceedings; PB: 799 p.
- Country of Publication:
- United States
- Language:
- English
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