MOCVD regrowth of InP on RIE patterned substrates for p-substrate 1.3{micro}m BH laser application

Book · Tue Dec 31 00:00:00 EST 1996

OSTI ID:536243

Takemi, M; Kimura, T; Suzuki, D; Shiba, T; Shibata, K; Mihashi, Y; Takamiya, S; Aiga, M ^[1]

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1. Mitsubishi Electric Corp., Itami, Hyogo (Japan). Optoelectronic and Microwave Devices Lab.

The authors have investigated the growth behavior of sulfur-doped n-InP layers around the dry-etched mesas as a function of various H{sub 2}S flow rates. It is found that the growth rate of n-InP layer of the sidewall ((1{bar 1}0) plane) of the mesa is significantly affected by the H{sub 2}S flow rate. Using this technique, the authors have fabricated p-substrate 1.3{micro}m BH laser with a pnp current-blocking structure around the dry-etched mesa and realized excellent lasing characteristics with high reliability for the first time.

• OSTI ID: 536243
• Report Number(s): CONF-960498-; ISBN 0-7803-3283-0; TRN: IM9745%%82
• Resource Relation: Conference: 8. international conference on indium phosphide and related materials, Schwaebisch-Gmuend (Germany), 21-25 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Indium phosphide and related materials 1996: Proceedings; PB: 799 p.
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
CHEMICAL VAPOR DEPOSITION
ETCHING
INDIUM PHOSPHIDES
SEMICONDUCTOR LASERS
ORGANOMETALLIC COMPOUNDS
THIN FILMS
DOPED MATERIALS
SULFUR
MASKING
SILICON OXIDES
FLOW RATE
OPTICAL PROPERTIES
RELIABILITY
EXPERIMENTAL DATA