Polarization insensitive electroabsorption modulator with record power saturation using strained InGaAsP/InGaAsP/InAsP MQW structure
- France Telecom, Bagneux (France)
Polarization insensitive multi-quantum wells electroabsorption modulators becomes very attractive for optical communications, in particular for in line applications where the incident light polarization is random. Several structures with different design have already been reported with high performances namely high extinction ratio, low applied voltage and large bandwidth. One key issue of the modulators remains their power saturation. The phenomenon cited as limiting power saturation is the accumulation of holes, in the quantum wells, which creates screening of applied field. To overcome this problem a low height barrier for holes is necessary to decrease the escape time of holes. In the InGaAsP system the relatively large valence band offset prevents a fast holes evacuation. Consequently the quaternary compositions range for wells and barriers which satisfied the two requirements, high power saturation and polarization insensitivity, is very narrow. In this study the authors report a innovative design with strain multiquantum well structure InGaAsP/InGaAsP/InAsP giving high power saturation together with polarization insensitivity. A careful analysis of the structure in terms of band gap engineering has been performed to fulfill the requirements.
- OSTI ID:
- 536211
- Report Number(s):
- CONF-960498-; ISBN 0-7803-3283-0; TRN: IM9745%%50
- Resource Relation:
- Conference: 8. international conference on indium phosphide and related materials, Schwaebisch-Gmuend (Germany), 21-25 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Indium phosphide and related materials 1996: Proceedings; PB: 799 p.
- Country of Publication:
- United States
- Language:
- English
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