Analytic description of valence band nonparabolicity in silicon

Journal Article · Thu Oct 01 00:00:00 EDT 1987 · Sov. Phys. J. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1007/BF00914829· OSTI ID:5356579

Gritsyuk, P M; Shtivel'man, K Ya; Prudius, A G

Setting out from our solutions of the Kane equation for hole energies in the epsilon << ..delta../sub 0/ and ..delta../sub 0/ << epsilon << epsilon/sub g/ regions and using the method of continuous fractions the authors obtain simple dispersion relations which accurately describe the valence bands in the nonparabolic region epsilon approx. ..delta../sub 0/. We also examine the change in the constant energy surfaces of heavy, light, and spin-split holes as the energy increases

• Research Organization: Chernovtsy State Univ. (USSR)
• OSTI ID: 5356579
• Journal Information: Sov. Phys. J. (Engl. Transl.); (United States), Vol. 30:4; Other Information: Translated from Izv. Vyssh. Uchebon. Zaved., Fiz.; 30: No. 4, 25-30(Apr 1987)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
BAND THEORY
ENERGY SPECTRA
HOLES
MATHEMATICAL MODELS
VALENCE
ANALYTICAL SOLUTION
DISPERSION RELATIONS
ENERGY DEPENDENCE
HALL EFFECT
J-J COUPLING
L-S COUPLING
SPIN
SURFACE ENERGY
ANGULAR MOMENTUM
COUPLING
ELEMENTS
ENERGY
FREE ENERGY
INTERMEDIATE COUPLING
PARTICLE PROPERTIES
PHYSICAL PROPERTIES
SEMIMETALS
SPECTRA
SURFACE PROPERTIES
THERMODYNAMIC PROPERTIES
360104* - Metals &amp; Alloys- Physical Properties