Characterization of crystalline low temperature GaAs layers annealed from an amorphous phase
Journal Article
·
· Journal of Electronic Materials
- Naval Research Lab., Washington, DC (United States); and others
The results from an in-depth characterization of as-grown and annealed low-temperature GaAs layers deposited at less than 260{degrees}C are presented. The layers, amorphous as grown, became crystalline after annealing. The crystallization was documented by several characterization techniques including photo-reflectance, Raman spectroscopy, photoluminescence, transmission electron microscopy, and double-crystal x-ray diffraction. The n-type conductivity of the annealed films was exploited for the construction of a diode structure. 7 refs., 3 figs.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 535209
- Journal Information:
- Journal of Electronic Materials, Vol. 22, Issue 12; Other Information: PBD: Dec 1993
- Country of Publication:
- United States
- Language:
- English
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