Gallium self-diffusion in gallium phosphide

Journal Article · Tue Apr 01 00:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118705· OSTI ID:534418

Wang, L; Wolk, J A; Hsu, L; Haller, E E ^[1]; Erickson, J W ^[2]; Cardona, M; Ruf, T ^[3]; Silveira, J P; Briones, F ^[4]

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1. University of California at Berkeley and Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. Charles Evans Associates, Redwood City, California 94063 (United States)
3. Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)
4. Instituto de Microelectronica de Madrid, Centro Nacional de Microelectronica, CSIC, Serrano 144, 28066 Madrid (Spain)

Ga self-diffusion in gallium phosphide (GaP) is measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy (SIMS) is used to monitor intermixing of {sup 69}Ga and {sup 71}Ga between isotopically pure GaP epilayers which are grown by molecular beam epitaxy (MBE) on GaP substrates. The Ga self-diffusion coefficient in undoped GaP is determined to be {ital D}=2.0 cm{sup 2}s{sup {minus}1} exp({minus}4.5eV/k{sub B}T) between 1000 and 1190{degree}C under phosphorus-rich condition. The self-diffusion entropy is found to be {approximately}4 k{sub B}. {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 534418
• Journal Information: Applied Physics Letters, Vol. 70, Issue 14; Other Information: PBD: Apr 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM
SELF-DIFFUSION
GALLIUM PHOSPHIDES
ATOM TRANSPORT
MASS SPECTRA
HETEROJUNCTIONS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K
ENTROPY
MOLECULAR BEAM EPITAXY
GALLIUM 69
GALLIUM 71