Interactions between superconducting YBa sub 2 Cu sub 3 O sub 7 minus x and silicon using different buffer layers

Journal Article · Sun Sep 15 00:00:00 EDT 1991 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.349274· OSTI ID:5341652

Jia, Q X; Jiao, K L; Anderson, W A ^[1]

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1. State University of New York at Buffalo, Department of Electrical and Computer Engineering, Bonner Hall, Amherst, New York (USA)

Superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} (YBCO) thin films were deposited on Si substrates using rf magnetron sputtering from a stoichiometric YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} target. Either metallic RuO{sub 2} or insulating yttria-stabilized zirconia (YSZ) was used as a buffer layer to nucleate the superconducting film, and also to prevent interactions between Si and YBCO. The electrical properties of the Si were studied using deep level transient spectroscopy on a structure of metal/SiO{sub 2} ({similar to}15 A)/Si diode after removing YBCO and the buffer layer. The introduction of a new deep level in the Si at {ital E}{sub {ital A}} = {ital E}{sub {ital v}} + 0.244 eV after YBCO deposition, where YSZ ({similar to}100 nm) was used as a buffer layer, was attributed to Cu after interaction between YBCO and Si. However, this energy level was not found in the Si if RuO{sub 2} was used as a buffer. The degradation of electrical properties of the Si after YBCO deposition places limitations on the choice of buffer layers in order to realize the integration between superconductor and semiconductor as used in passive or hybrid electronic devices.

• OSTI ID: 5341652
• Journal Information: Journal of Applied Physics; (United States), Vol. 70:6; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM OXIDES
INTERACTIONS
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JUNCTIONS
QUATERNARY COMPOUNDS
RUTHENIUM OXIDES
SPUTTERING
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ZIRCONIUM OXIDES
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BARIUM COMPOUNDS
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RUTHENIUM COMPOUNDS
SEMIMETALS
SUPERCONDUCTORS
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