Mechanism of ion-beam-induced deposition
Ion-beam induced deposition (IBID) is described as well as the system developed for in-situ measurement of IBID. Gold films were deposited on quartz crystal microbalances (QCM) by decomposing C{sub 7}H{sub 7}F{sub 6}O{sub 2}Au (dimethyl gold hexafluoroacetylacetonate, or DMG (hfac)) with 2- to 10-keV Xe{sup +}, Kr{sup +}, Ar{sup +}, Ne{sup +}, or He{sup +} ion beams. A conceptual model for ion beam induced deposition is presented which relates the net deposition yield to the gas adsorption, the decomposition cross section, and the sputter yield. To test this model, the deposition rate with 5-keV Ar{sup +} ions was measured in-situ as a function of ion current, gas pressure, and substrate temperature using the QCM. The deposition yield (mass deposited per incident ion) increased with increasing gas pressure and decreasing substrate temperature. The QCM was also used to measure the adsorption of DMG (hfac). Results demonstrate that the variation in deposition yield with temperature and pressure was proportional to the number of DMG (hfac) molecules adsorbed per cm{sup 2}, and verify the conceptual model. Based on the observed correlation between deposition yield and adsorption, a decomposition cross section for 5-keV argon ions of 2 {times} 10{sup {minus}13} cm{sup 2} was estimated.
- Research Organization:
- Massachusetts Inst. of Tech., Cambridge, MA (United States)
- OSTI ID:
- 5332569
- Resource Relation:
- Other Information: Thesis (Ph.D.)
- Country of Publication:
- United States
- Language:
- English
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GOLD
ENERGY BEAM DEPOSITION
QUARTZ
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ARGON IONS
CROSS SECTIONS
ION BEAMS
ION COLLISIONS
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RARE GASES
BEAMS
CHARGED PARTICLES
COATINGS
COLLISIONS
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ELEMENTS
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