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Title: Long wavelength (1.3 {mu}m) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region

Abstract

We proposed and demonstrated a novel design for long wavelength (1.3 {mu}m) vertical-cavity surface-emitting lasers (VCSELs). In this design, oxygen-implanted current-confinement regions were formed in a GaAs/AlGaAs Bragg reflector which is the bottom mirror wafer bonded to an AlGaInAs/InP cavity consisting of nine strain-compensated quantum wells. Room- temperature continuous-wave (cw) operation of 1.3 {mu}m-VCSELs with a record low cw threshold current density of 1.57kA/cm{sup 2} and a record low cw threshold current of 1 mA have been realized. {copyright} {ital 1997 American Institute of Physics.}

Authors:
; ;  [1]; ;  [2]; ;  [3]; ;  [4]
  1. School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, New York 14853 (United States)
  2. Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712-1084 (United States)
  3. Department of Semiconductor Materials, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  4. Telecommunication Laboratories, Chunghwa Telecom Company, Taiwan (China)
Publication Date:
OSTI Identifier:
531700
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 71; Journal Issue: 1; Other Information: PBD: Jul 1997
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR LASERS; DESIGN; FABRICATION; ALUMINIUM COMPOUNDS; INDIUM COMPOUNDS; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; THRESHOLD CURRENT; LASER MIRRORS; LASER CAVITIES; GAIN

Citation Formats

Qian, Y, Zhu, Z H, Lo, Y H, Huffaker, D L, Deppe, D G, Hou, H Q, Hammons, B E, Lin, W, and Tu, Y K. Long wavelength (1.3 {mu}m) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region. United States: N. p., 1997. Web. doi:10.1063/1.119459.
Qian, Y, Zhu, Z H, Lo, Y H, Huffaker, D L, Deppe, D G, Hou, H Q, Hammons, B E, Lin, W, & Tu, Y K. Long wavelength (1.3 {mu}m) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region. United States. doi:10.1063/1.119459.
Qian, Y, Zhu, Z H, Lo, Y H, Huffaker, D L, Deppe, D G, Hou, H Q, Hammons, B E, Lin, W, and Tu, Y K. Tue . "Long wavelength (1.3 {mu}m) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region". United States. doi:10.1063/1.119459.
@article{osti_531700,
title = {Long wavelength (1.3 {mu}m) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region},
author = {Qian, Y and Zhu, Z H and Lo, Y H and Huffaker, D L and Deppe, D G and Hou, H Q and Hammons, B E and Lin, W and Tu, Y K},
abstractNote = {We proposed and demonstrated a novel design for long wavelength (1.3 {mu}m) vertical-cavity surface-emitting lasers (VCSELs). In this design, oxygen-implanted current-confinement regions were formed in a GaAs/AlGaAs Bragg reflector which is the bottom mirror wafer bonded to an AlGaInAs/InP cavity consisting of nine strain-compensated quantum wells. Room- temperature continuous-wave (cw) operation of 1.3 {mu}m-VCSELs with a record low cw threshold current density of 1.57kA/cm{sup 2} and a record low cw threshold current of 1 mA have been realized. {copyright} {ital 1997 American Institute of Physics.}},
doi = {10.1063/1.119459},
journal = {Applied Physics Letters},
number = 1,
volume = 71,
place = {United States},
year = {1997},
month = {7}
}