Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
- Institut fuer Festkoerperphysik, Technische Universitaet Berlin, 10623 Berlin (Germany)
- Max-Planck-Institut fuer Mikrostrukturphysik, D-06120 Halle (Germany)
We report on quantum dot (QD) lasers made of stacked InAs dots grown by metalorganic chemical vapor deposition. Successful growth of defect-free binary InAs/GaAs QDs with high lateral density (d{sub l}{ge}4{times}10{sup 10}cm{sup {minus}2}) was achieved in a narrow growth parameter window. The room-temperature photoluminescence (PL) intensity is enhanced up to a factor of 3 and the PL peak width is reduced by more than 30{percent} when a thin layer of In{sub 0.3}Ga{sub 0.7}As is deposited onto the InAs QDs. A QD laser with a single sheet of such InAs/InGaAs/GaAs QDs exhibits threshold current densities as low as 12.7 and 181A/cm{sup 2} at 100 and 300 K, respectively. Lasers with threefold stacked QDs show ground-state lasing and allow for cw operation at room temperature. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 531699
- Journal Information:
- Applied Physics Letters, Vol. 71, Issue 1; Other Information: PBD: Jul 1997
- Country of Publication:
- United States
- Language:
- English
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