Overestimation of oxide defects density in large test capacitors due to plasma processing

Journal Article · Mon Sep 01 00:00:00 EDT 1997 · IEEE Transactions on Electron Devices

DOI:https://doi.org/10.1109/16.622615· OSTI ID:531514

Shin, H; Je, M ^[1]; Hu, C ^[2]

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1. Korea Advanced Inst. of Science and Technology, Taejon (Korea, Republic of). Dept. of Electrical Engineering
2. Univ. of California, Berkeley, CA (United States)

Oxide shorts density obtained from large test capacitors is found to be higher than that in a multiple of separated small capacitors having the same total oxide area. The observed difference in failure rate is explained by the different oxide charging currents for the weak spots in the two devices during plasma processing. This experiment can explain the observed lower density of shorts after plasma processing in IC`s, which is composed of many small devices, than in test structures which are large capacitors. Suggestions on the test structures are presented.

• Sponsoring Organization: Sandia National Labs., Albuquerque, NM (United States)
• OSTI ID: 531514
• Journal Information: IEEE Transactions on Electron Devices, Vol. 44, Issue 9; Other Information: PBD: Sep 1997
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
INTEGRATED CIRCUITS
ELECTRICAL FAULTS
SEMICONDUCTOR DEVICES
ETCHING
OXIDES
DEFECTS
TESTING
FAILURES
FABRICATION