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Title: Radiation effects in silicon: Summary

Conference ·
OSTI ID:5310591

Semiconductor device characteristics are strongly dependent upon the macroscopic properties of the active materials. Semiconductor material properties of particular interest are: majority charge carrier concentration, minority carrier lifetime and charge carrier mobility. Silicon, due to favorable properties in addition to availability and processability, is used in a wide variety of applications ranging from solar cells to high speed very large scale integrated circuits. The importance of a given material property depends upon device type, circuit design and application. For example, minority carrier lifetime control is very important in junction devices that depend upon minority carrier charge transport (e.g., solar cells and bipolar transistors), whereas the majority carrier concentration is a primary consideration for junction field effect transistors (JFETS) and metal-oxide-semiconductor transistors (MOSFETS). Carrier mobility is important in device performance, but it is less variable than carrier lifetimes and concentrations. Charge particle detector applications which exploit charge generation and separation within Si require careful attention to carrier concentration profiles, and are especially demanding upon control of minority carrier lifetime.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5310591
Report Number(s):
SAND-88-0420C; CONF-880356-1; ON: DE88006642
Resource Relation:
Conference: Task force meeting on radiation effects at the superconducting super collider, Berkeley, CA, USA, 7 Mar 1988
Country of Publication:
United States
Language:
English