Interactions of thin Ti films with Si, SiO/sub 2/, Si/sub 3/N/sub 4/, and SiO/sub x/N/sub y/ under rapid thermal annealing

Journal Article · Fri Jul 01 00:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341434· OSTI ID:5310399

Morgan, A E; Broadbent, E K; Ritz, K N; Sadana, D K; Burrow, B J

Thin Ti films sputter deposited onto single-crystal Si, thermal SiO/sub 2/, and low-pressure chemical vapor deposited Si/sub 3/N/sub 4/ and SiO/sub x/N/sub y/ (xapprox. =yapprox. =1) substrates have been rapid thermal annealed in N/sub 2/ or Ar, with and without an amorphous Si overlayer, and the reactions followed using Auger elecron spectroscopy, transmission electron microscopy, electron diffraction, and sheet resistance measurements. A multilayer film is created in practically every case with each layer containing essentially a single reaction product, viz.,TiSi/sub x/, TiO/sub x/, delta-TiN, or TiN/sub x/O/sub 1/..sqrt../sub x/. The results are discussed in light of published Ti-Si-O and Ti-Si-N phase diagrams.

• Research Organization: Philips Research Laboratories Sunnyvale, Signetics Corporation, Sunnyvale, California 94088-3409
• OSTI ID: 5310399
• Journal Information: J. Appl. Phys.; (United States), Vol. 64:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
SURFACE COATING
SILICON NITRIDES
SILICON OXIDES
TITANIUM
DEPOSITION
ANNEALING
AUGER ELECTRON SPECTROSCOPY
CHEMICAL VAPOR DEPOSITION
EXPERIMENTAL DATA
FILMS
MONOCRYSTALS
SUBSTRATES
CHALCOGENIDES
CHEMICAL COATING
CRYSTALS
DATA
ELECTRON SPECTROSCOPY
ELEMENTS
HEAT TREATMENTS
INFORMATION
METALS
NITRIDES
NITROGEN COMPOUNDS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
SEMIMETALS
SILICON COMPOUNDS
SPECTROSCOPY
TRANSITION ELEMENTS
360602* - Other Materials- Structure & Phase Studies