Short-wavelength (approx. 625 nm) room-temperature continuous laser operation of In/sub 0. 5/(Al/sub x/Ga/sub 1-//sub x/)/sub 0. 5/P quantum well heterostructures

Journal Article · Mon Apr 18 00:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99149· OSTI ID:5307071

Nam, D W; Deppe, D G; Jr, Holonyak N; Fletcher, R M; Kuo, C P; Osentowski, T D; Craford, M G

Data are presented demonstrating very-short-wavelength (625 nm) room-temperature (300 K) continuous (cw) photopumped laser operation of In/sub 1-//sub y/(Al/sub x/Ga/sub 1-//sub x/)/sub y/P-In/sub 1-//sub y/ (Al/sub x/Ga/sub 1-//sub x/)/sub y/P quantum well heterostructures grown lattice matched (yapprox. =0.5) on a GaAs substrate via metalorganic chemical vapor deposition. In addition, 300 K pulsed laser operation (J/sub th/approx.10/sup 4/ A/cm/sup 2/, 625 nm) of diodes fabricated from the same crystal is described.

• Research Organization: Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 5307071
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 52:16
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM PHOSPHIDES
STIMULATED EMISSION
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
SEMICONDUCTOR LASERS
FABRICATION
OPERATION
THRESHOLD CURRENT
CHEMICAL VAPOR DEPOSITION
EXPERIMENTAL DATA
GALLIUM ARSENIDES
HETEROJUNCTIONS
MEDIUM TEMPERATURE
OPTICAL PUMPING
VISIBLE RADIATION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DATA
DEPOSITION
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY-LEVEL TRANSITIONS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PUMPING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SURFACE COATING
420300* - Engineering- Lasers- (-1989)