Si[sub 3]N[sub 4]/Si/Ge/GaAs metal-insulator-semiconductor structures grown by [ital in] [ital situ] chemical vapor deposition

Journal Article · Tue Feb 01 00:00:00 EST 1994 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.356345· OSTI ID:5303440

Reed, J; Gao, G B; Bochkarev, A; Morkoc, H ^[1]

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1. Coordinated Science Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

The [ital in] [ital situ], heteroepitaxial growth of Ge films grown on (100) [ital n]-GaAs, followed by [ital in] [ital situ] deposition of a Si[sub 3]N[sub 4]/Si insulator to form a Ge metal-insulator-semiconductor structure, is reported. The growth of the Ge, Si, and Si[sub 3]N[sub 4] is carried out in an ultrahigh vacuum, chemical vapor deposition system which is vacuum connected to an adjacent III-V molecular beam epitaxy machine in which the GaAs is grown. The Ge is grown at low temperature (250 [degree]C) using GeH[sub 4] and excited He from a remote plasma. After a rapid thermal annealing step, a marked reduction in hysteresis is observed in the capacitance-voltage characteristics and the density of interface trap states at the Si[sub 3]N[sub 4]/Si/Ge interface, as determined from the magnitude of the conductance peak, is found to decrease by a factor of 5, to 1[times]10[sup 11] eV[sup [minus]1] cm[sup [minus]2].

• DOE Contract Number: FG02-91ER45439
• OSTI ID: 5303440
• Journal Information: Journal of Applied Physics; (United States), Vol. 75:3; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
GERMANIUM
SILICON
SILICON NITRIDES
ANNEALING
INTERFACES
SEMICONDUCTOR DEVICES
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
DEPOSITION
ELEMENTS
GALLIUM COMPOUNDS
HEAT TREATMENTS
METALS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SEMIMETALS
SILICON COMPOUNDS
SURFACE COATING
360606* - Other Materials- Physical Properties- (1992-)