Theoretical study of the energy-band structure of partially CuPt-ordered Ga{sub 0.5}In{sub 0.5}P
Journal Article
·
· Physical Review, B: Condensed Matter
- Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, S119260 (Singapore)
- Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States)
We propose a model for the partially ordered Ga{sub 0.5}In{sub 0.5}P alloys in which the CuPt structure is always retained. A long-range order parameter is defined in terms of the cation potentials on the group-III sublattice. Using this model we studied the electronic band structure of Ga{sub 0.5}In{sub 0.5}P alloys as a continuous function of the order parameter using the empirical pseudopotential method. Trends in the fundamental energy gap and effective masses are obtained. We found that the anisotropy in the effective masses is enhanced by ordering. {copyright} {ital 1997} {ital The American Physical Society}
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 530217
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 55, Issue 24; Other Information: PBD: Jun 1997
- Country of Publication:
- United States
- Language:
- English
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Thu Sep 01 00:00:00 EDT 1994
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OSTI ID:530217
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