Anomalous Hall effect in thin films of Pr{sub 0.5}Sr{sub 0.5}MnO{sub 3}
- Laboratorium voor Vaste-Stoffysica en Magnetisme, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium)
We report on the type and density of charge carriers obtained from Hall-effect measurements in the three different magnetic phases of Pr{sub 0.5}Sr{sub 0.5}MnO{sub 3} . The field dependence of the Hall resistivity has two contributions of opposite sign: one is related to skew scattering and dominates in low magnetic fields; the other one is due to the Lorentz-force contribution which prevails at higher fields. This second contribution corresponds to a temperature-independent carrier density in the order of 0.8 holes per chemical unit cell. The skew-scattering contribution is related to the susceptibility of the material and is maximum at the transition temperature from the ferro- to the antiferromagnetic state. {copyright} {ital 1997} {ital The American Physical Society}
- OSTI ID:
- 530184
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 55, Issue 22; Other Information: PBD: Jun 1997
- Country of Publication:
- United States
- Language:
- English
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