High-speed modulation characteristics of helium-implanted zinc-diffused vertical cavity surface emitting lasers

Journal Article · Mon Nov 01 00:00:00 EST 1993 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/68.250041· OSTI ID:5301621

Dziura, T G; Yang, Y J; Fernandez, R; Bardin, T; Wang, S C ^[1]

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1. Lockheed Palo Alto Research Lab., CA (United States)

The high-speed modulation characteristics of helium-implanted, zinc-diffused vertical cavity surface-emitting semiconductor lasers are measured. Devices with a nominal active region diameter of 10 and 20 [mu]m exhibit a move-out rate of 4.5--6.5 GHz/mW[sup 1/2] and a K factor of 0.65--0.85 ns. Maximum modulation frequency is limited by ohmic heating to approximately 5.5 GHz for 10-[mu]m diameter lasers and to 2.7 GHz for 20-[mu]m diameter lasers. A roll off in the response below the relaxation oscillation frequency is observed and is explained well by a diffusion capacitance model.

• OSTI ID: 5301621
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Vol. 5:11; ISSN 1041-1135
• Country of Publication: United States
• Language: English

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