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Title: Electron-trapping-triggered anneal of defect states in silicon-rich hydrogenated amorphous silicon nitride

Abstract

The dc-current stress behavior of Mo/a-SiN{sub x}H{sub y}/Mo thin-film diodes is discussed for several a-SiN{sub x}H{sub y}-plasma-deposition conditions. Current transport is governed by thermionic field emission of electrons over a reverse biased Schottky barrier. The barrier height is determined by the a-SiN{sub x}H{sub y}-plasma-deposition conditions. Therefore these back-to-back Schottky devices provide an elegant way to perform dc-current stressing at several well defined carrier densities for similar stress fields. It is shown that such experiments allow assessment of defect-state creation/anneal mechanisms in a-SiN{sub x}H{sub y}. An electron-trapping-triggered anneal mechanism accounts for the observed dependence of the defect density at the electrode injecting contact (cathode) on the hole-barrier height at the anode. Also a new microscopically detailed anneal reaction scheme is proposed. The defect-state creation/anneal mechanism is expected to be generally applicable for all silicon-rich hydrogenated amorphous silicon alloys. {copyright} {ital 1997 American Institute of Physics.}

Authors:
; ; ;  [1]
  1. Philips Research Laboratories, Professor Holstlaan 4, 5656 JA Eindhoven (The Netherlands)
Publication Date:
OSTI Identifier:
530039
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 82; Journal Issue: 1; Other Information: PBD: Jul 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SILICON NITRIDES; DEFECTS; SCHOTTKY BARRIER DIODES; SILICON COMPOUNDS; HYDROGEN; AMORPHOUS STATE; HYDROGEN ADDITIONS; THIN FILMS; STRESSES; MOLYBDENUM; PLASMA; TRAPPING; ANNEALING

Citation Formats

Oversluizen, G, Lodders, W H, Johnson, M T, and van der Put, A A. Electron-trapping-triggered anneal of defect states in silicon-rich hydrogenated amorphous silicon nitride. United States: N. p., 1997. Web. doi:10.1063/1.365809.
Oversluizen, G, Lodders, W H, Johnson, M T, & van der Put, A A. Electron-trapping-triggered anneal of defect states in silicon-rich hydrogenated amorphous silicon nitride. United States. https://doi.org/10.1063/1.365809
Oversluizen, G, Lodders, W H, Johnson, M T, and van der Put, A A. 1997. "Electron-trapping-triggered anneal of defect states in silicon-rich hydrogenated amorphous silicon nitride". United States. https://doi.org/10.1063/1.365809.
@article{osti_530039,
title = {Electron-trapping-triggered anneal of defect states in silicon-rich hydrogenated amorphous silicon nitride},
author = {Oversluizen, G and Lodders, W H and Johnson, M T and van der Put, A A},
abstractNote = {The dc-current stress behavior of Mo/a-SiN{sub x}H{sub y}/Mo thin-film diodes is discussed for several a-SiN{sub x}H{sub y}-plasma-deposition conditions. Current transport is governed by thermionic field emission of electrons over a reverse biased Schottky barrier. The barrier height is determined by the a-SiN{sub x}H{sub y}-plasma-deposition conditions. Therefore these back-to-back Schottky devices provide an elegant way to perform dc-current stressing at several well defined carrier densities for similar stress fields. It is shown that such experiments allow assessment of defect-state creation/anneal mechanisms in a-SiN{sub x}H{sub y}. An electron-trapping-triggered anneal mechanism accounts for the observed dependence of the defect density at the electrode injecting contact (cathode) on the hole-barrier height at the anode. Also a new microscopically detailed anneal reaction scheme is proposed. The defect-state creation/anneal mechanism is expected to be generally applicable for all silicon-rich hydrogenated amorphous silicon alloys. {copyright} {ital 1997 American Institute of Physics.}},
doi = {10.1063/1.365809},
url = {https://www.osti.gov/biblio/530039}, journal = {Journal of Applied Physics},
number = 1,
volume = 82,
place = {United States},
year = {Tue Jul 01 00:00:00 EDT 1997},
month = {Tue Jul 01 00:00:00 EDT 1997}
}