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Title: Intersubband stimulated emission in GaAs/AlGaAs quantum wells: Pump-probe experiments using a two-color free-electron laser

Abstract

Intersubband stimulated emission under optical pumping has been observed in the conduction band of GaAs{endash}AlGaAs quantum wells. The asymmetric coupled quantum wells which exhibit three conduction bound levels are designed to exhibit population inversion under optical pumping. An optical excitation at {lambda}=9.2{mu}m is used to bleach the absorption between the ground and second excited subband. The population inversion between excited subbands is pumped and probed on a picosecond time scale by a tunable two-color free-electron laser. The stimulated amplification is studied at low temperature in infrared waveguides as a function of the waveguide length and of the probe wavelength. A stimulated gain {approx}80cm{sup {minus}1} is measured at 12.5 {mu}m in agreement with calculations. {copyright} {ital 1997 American Institute of Physics.}

Authors:
; ; ;  [1]; ; ;  [2]; ;  [3];  [4];  [5]
  1. Institut dElectronique Fondamentale, URA CNRS 22, Bat. 220, Universite Paris-Sud, 91405 Orsay (France)
  2. CLIO/LURE, Bat. 209 D, Universite Paris-Sud, 91405 Orsay (France)
  3. Laboratoire de Microstructure et Microelectronique, UPR CNRS 20, 196 Avenue H. Ravera, 92220 Bagneux (France)
  4. Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  5. Laboratoire Central de Recherche, Thomson-CSF, Domaine de Corbeville, 91404 Orsay (France)
Publication Date:
OSTI Identifier:
529981
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 70; Journal Issue: 24; Other Information: PBD: Jun 1997
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; GALLIUM ARSENIDES; STIMULATED EMISSION; ALUMINIUM ARSENIDES; FREE ELECTRON LASERS; ALUMINIUM COMPOUNDS; OPTICAL PUMPING; POPULATION INVERSION; WAVEGUIDES; INFRARED RADIATION

Citation Formats

Gauthier-Lafaye, O., Sauvage, S., Boucaud, P., Julien, F.H., Prazeres, R., Glotin, F., Ortega, J., Thierry-Mieg, V., Planel, R., Leburton, J., and Berger, V. Intersubband stimulated emission in GaAs/AlGaAs quantum wells: Pump-probe experiments using a two-color free-electron laser. United States: N. p., 1997. Web. doi:10.1063/1.119125.
Gauthier-Lafaye, O., Sauvage, S., Boucaud, P., Julien, F.H., Prazeres, R., Glotin, F., Ortega, J., Thierry-Mieg, V., Planel, R., Leburton, J., & Berger, V. Intersubband stimulated emission in GaAs/AlGaAs quantum wells: Pump-probe experiments using a two-color free-electron laser. United States. doi:10.1063/1.119125.
Gauthier-Lafaye, O., Sauvage, S., Boucaud, P., Julien, F.H., Prazeres, R., Glotin, F., Ortega, J., Thierry-Mieg, V., Planel, R., Leburton, J., and Berger, V. Sun . "Intersubband stimulated emission in GaAs/AlGaAs quantum wells: Pump-probe experiments using a two-color free-electron laser". United States. doi:10.1063/1.119125.
@article{osti_529981,
title = {Intersubband stimulated emission in GaAs/AlGaAs quantum wells: Pump-probe experiments using a two-color free-electron laser},
author = {Gauthier-Lafaye, O. and Sauvage, S. and Boucaud, P. and Julien, F.H. and Prazeres, R. and Glotin, F. and Ortega, J. and Thierry-Mieg, V. and Planel, R. and Leburton, J. and Berger, V.},
abstractNote = {Intersubband stimulated emission under optical pumping has been observed in the conduction band of GaAs{endash}AlGaAs quantum wells. The asymmetric coupled quantum wells which exhibit three conduction bound levels are designed to exhibit population inversion under optical pumping. An optical excitation at {lambda}=9.2{mu}m is used to bleach the absorption between the ground and second excited subband. The population inversion between excited subbands is pumped and probed on a picosecond time scale by a tunable two-color free-electron laser. The stimulated amplification is studied at low temperature in infrared waveguides as a function of the waveguide length and of the probe wavelength. A stimulated gain {approx}80cm{sup {minus}1} is measured at 12.5 {mu}m in agreement with calculations. {copyright} {ital 1997 American Institute of Physics.}},
doi = {10.1063/1.119125},
journal = {Applied Physics Letters},
number = 24,
volume = 70,
place = {United States},
year = {Sun Jun 01 00:00:00 EDT 1997},
month = {Sun Jun 01 00:00:00 EDT 1997}
}