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Title: Solar silicon via improved and expanded metallurgical silicon technology. Quarterly report No. 5

Technical Report ·
DOI:https://doi.org/10.2172/5290693· OSTI ID:5290693

The goal of this program is to produce solar-cell-grade silicon at 3000 Mt/y for less than $10/kg by 1986. The approach is to improve upon and merge two already existing commercial technologies: the arc-furnace method of producing $1/kg, 98-% pure metallurgical silicon and the Czochralski crystal-growth technique used in the semiconductor industry. Arc-furnace silicon has been produced with difficulty by smelting high-purity quartz with purified charcoal. After further purification using the Czochralski technique, the best silicon had 9 ppma boron (0.1 ohm-cm), 12 ppma phosphorus, and less than 1 ppma aluminum. The boron goal of 0.3 ohm-cm has been more closely approached. Phosphorus must be lowered due to its resistivity compensation effect. Solar cells prepared on 0.09-ohm-cm material have shown conversion efficiencies 90% of that of control cells fabricated by Spectrolab. The most probable cost of this SoG-Si process was estimated to be $8.25/kg Si for manufacturing and $17.10/kg for capital at the 3000 Mt/y rate.

Research Organization:
Dow Corning Corp., Hemlock, Mich. (USA). Solid-State Research and Development Lab.
DOE Contract Number:
NAS-7-100-954559
OSTI ID:
5290693
Report Number(s):
ERDA/JPL/954559-77/3
Country of Publication:
United States
Language:
English