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Title: A 1-kbit Josephson random access memory using variable threshold cells

Abstract

A new Josephson random access memory (RAM) based on variable threshold memory cells is demonstrated. The cell has the advantages of simple structure and small size. In order to achieve nondestructive readout (NDRO), rewriting is carried out with peripheral circuits consisting of latching logic gates without any superconducting loop. Experimental results show no failure in the 1028 logic gates of the peripheral circuits, and only a 2-percent bit failure in the cell plane of 1024 bits.

Authors:
; ; ; ;  [1]
  1. Electrotechnical Lab., 1-1-4 Umezono, Tsukuba, Ibaraki 305 (JP)
Publication Date:
OSTI Identifier:
5290134
Resource Type:
Journal Article
Journal Name:
IEEE (Institute of Electrical and Electronics Engineers) Journal of Solid State Circuits; (USA)
Additional Journal Information:
Journal Volume: 24:4; Journal ID: ISSN 0018-9200
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; JOSEPHSON JUNCTIONS; DESIGN; LOGIC CIRCUITS; FABRICATION; ALUMINIUM OXIDES; MATERIALS TESTING; NIOBIUM OXIDES; NONDESTRUCTIVE TESTING; POWER SUPPLIES; SIZE; SUPERCONDUCTIVITY; TECHNOLOGY ASSESSMENT; TUNNEL EFFECT; ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; JUNCTIONS; NIOBIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SUPERCONDUCTING JUNCTIONS; TESTING; TRANSITION ELEMENT COMPOUNDS; 426001* - Engineering- Superconducting Devices & Circuits- (1990-)

Citation Formats

Kurosawa, I, Nakagawa, H, Kosaka, S, Aoyagi, M, and Takada, S. A 1-kbit Josephson random access memory using variable threshold cells. United States: N. p., 1989. Web. doi:10.1109/4.34089.
Kurosawa, I, Nakagawa, H, Kosaka, S, Aoyagi, M, & Takada, S. A 1-kbit Josephson random access memory using variable threshold cells. United States. https://doi.org/10.1109/4.34089
Kurosawa, I, Nakagawa, H, Kosaka, S, Aoyagi, M, and Takada, S. Tue . "A 1-kbit Josephson random access memory using variable threshold cells". United States. https://doi.org/10.1109/4.34089.
@article{osti_5290134,
title = {A 1-kbit Josephson random access memory using variable threshold cells},
author = {Kurosawa, I and Nakagawa, H and Kosaka, S and Aoyagi, M and Takada, S},
abstractNote = {A new Josephson random access memory (RAM) based on variable threshold memory cells is demonstrated. The cell has the advantages of simple structure and small size. In order to achieve nondestructive readout (NDRO), rewriting is carried out with peripheral circuits consisting of latching logic gates without any superconducting loop. Experimental results show no failure in the 1028 logic gates of the peripheral circuits, and only a 2-percent bit failure in the cell plane of 1024 bits.},
doi = {10.1109/4.34089},
url = {https://www.osti.gov/biblio/5290134}, journal = {IEEE (Institute of Electrical and Electronics Engineers) Journal of Solid State Circuits; (USA)},
issn = {0018-9200},
number = ,
volume = 24:4,
place = {United States},
year = {1989},
month = {8}
}