Plasma etching of refractory metals (W, Mo, Ta) and silicon in SF/sub 6/ and SF/sub 6/-O/sub 2/. An analysis of the reaction products

Journal Article · Sun Dec 01 00:00:00 EST 1985 · Plasma Chem. Plasma Process.; (United States)

DOI:https://doi.org/10.1007/BF00566008· OSTI ID:5284222

Picard, A; Turban, G

The etching rates and reaction products of refractory metals (W, Mo, and Ta) and silicon have been studied in a SF/sub 6/-O/sub 2/ r.f. plasma at 0.2 torr. The relative concentrations of WF/sub 6/ and WOF/sub 4/ and the intensities of the WF/sup +/ /SUB n/ , (n = 3-5), WOF/sup +/ /SUB m/ (m = 1-3), MoF/sup +/ /SUB n/ , and MoF/sup +/ /SUB m/ ions have been measured by mass spectroscopy. An analysis of the neutral composition of the plasma during etching of these metals and a comparison with the results obtained for silicon show that at least two species are involved for W and Mo etching: fluorine and oxygen atoms. A reaction scheme is proposed.

• Research Organization: Univ. de Nantes, Nantes
• OSTI ID: 5284222
• Journal Information: Plasma Chem. Plasma Process.; (United States), Vol. 5:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
MOLYBDENUM
ETCHING
PLASMA
IONIC COMPOSITION
SILICON
TANTALUM
TUNGSTEN
CHEMICAL ANALYSIS
MASS SPECTRA
MOLECULAR IONS
MOLYBDENUM FLUORIDES
OXYFLUORIDES
OXYGEN
REFRACTORY METALS
SULFUR FLUORIDES
TUNGSTEN COMPOUNDS
TUNGSTEN FLUORIDES
ALLOYS
CHARGED PARTICLES
ELEMENTS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
IONS
METALS
MOLYBDENUM COMPOUNDS
NONMETALS
OXYGEN COMPOUNDS
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SPECTRA
SULFUR COMPOUNDS
SURFACE FINISHING
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
360101* - Metals & Alloys- Preparation & Fabrication