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Title: Effects of impurity trapping on irradiation-induced swelling and creep

Technical Report ·
DOI:https://doi.org/10.2172/5281432· OSTI ID:5281432

A general theory of the effects of point defect trapping on radiation-induced swelling and creep deformation rates is developed. The effects on the fraction of defects recombining, and on void nucleation, void growth and creep due to the separate processes of dislocation climb-glide and dislocation climb (the so-called SIPA mechanism) are studied. Trapping of vacancies or interstitials increases total recombination and decreases the rates of deformation processes. For fixed trapping parameters, the reduction is largest for void nucleation, less for void growth and creep due to dislocation climb-glide, and least for creep due to dislocation climb. With this formation, the effects of trapping at multiple vacancy and interstitial traps and of spatial and temporal variation in trap concentrations may be determined. Alternative pictures for viewing point defect trapping in terms of effective recombination and diffusion coefficients are derived. It is shown that previous derivations of these coefficients are incorrect. A rigorous explanation is given of the well-known numerical result that interstitial trapping is significant only if the binding energy exceeds the difference between the vacancy and interstitial migration energies, while vacancy trapping is significant even at small binding energies. Corrections which become necessary at solute concentrations above about 0.1% are described. Numerical results for a wide range of material and irradiation parameters are presented.

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
W-7405-ENG-26
OSTI ID:
5281432
Report Number(s):
ORNL/TM-6134; TRN: 78-003994
Country of Publication:
United States
Language:
English