The increased response time in hydrogenated microcrystalline silicon - a Fermi level effect or a structural effect in a grainy material?
- Technical Univ. of Munich, Garching (Germany). Physics Dept.
- Univ. of Ljubljana (Slovenia). Faculty of Electrical Engineering
- Syracuse Univ., NY (United States). Physics Dept.
The typical photocurrent decay time {tau}{sub R} in intrinsic prepared hydrogenated microcrystalline silicon ({micro}c-Si:H) is around 1ms similar to its n-doped amorphous counterpart (a-Si:H:P). Depending on the crystalline fraction X{sub C}, the {micro}c-Si:H films show an activation energy near to or below 0.5 eV. To find out if this analogy of {tau}{sub R} could be due to a Fermi level shift or to the grainy structure in {micro}c-Si:H films, the authors have studied the behavior of {tau}{sub R} in doped a-Si:H and {micro}c-Si:H films of different X{sub C}. One-dimensional numerical simulation based on the Multiple Trapping Model (MTM) can explain this increase in terms of a Fermi level shift towards the conduction band. On the other hand, detailed measurements for temperatures from 100 to 400 K point to carrier trapping in deep states, most probably located at grain boundaries.
- OSTI ID:
- 527725
- Report Number(s):
- CONF-960401-; ISBN 1-55899-323-1; TRN: IM9741%%153
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
- Country of Publication:
- United States
- Language:
- English
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