Photoluminescence in hydrogenated amorphous silicon with sulfur
- Univ. of Utah, Salt Lake City, UT (United States). Dept. of Physics
Photoluminescence (PL) has been measured at 80 K in a series of samples of sulfur doped a-Si:H using above- and below-bandgap excitation energies (2.4 and 1.38 eV). In addition, the absorption coefficients at room temperature have been obtained using photothermal deflection spectroscopy (PDS). At light sulfur doping levels (S/Si < 10{sup {minus}2}), the Urbach slopes of the absorption coefficients on a semilog plot and the optical energy gaps, as measured by the points at which a = 10{sup 4} cm{sup {minus}1}, are independent of sulfur concentration. The slopes decrease and optical gaps increase with increasing doping level for doping levels above 10{sup {minus}2}. At light sulfur doping levels the PL spectra excited with both above- and below-gap light are independent of sulfur concentration. For larger sulfur concentrations the shapes of the PL spectra vary. In particular, for S/Si > 10{sup {minus}2} the peak of the PL spectrum shifts to below 0.8 eV using below-gap excitation at 1.38 eV, and the defect PL band dominates. Comparing the PL spectra of sulfur- and phosphorus-doped samples, the PL spectra change for sulfur doping above 10{sup {minus}2} and for phosphorus doping above 1 ppm. This trend is consistent with inefficient sulfur doping.
- OSTI ID:
- 527694
- Report Number(s):
- CONF-960401-; ISBN 1-55899-323-1; TRN: IM9741%%122
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
- Country of Publication:
- United States
- Language:
- English
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