Tunneling and transport via localized states in thin a-Si tunnel barriers and the application of these barriers in a tunneling study of superconducting V-Ga alloy films
Abstract
The goal of Part I of this thesis was to gain an understanding of real potential tunnel barriers in metal/insulator/metal tunnel junctions beyond the conventional average potential barrier' approximation used to describe them. In particular, it was hoped to understand the role of localized states in the tunnel barrier and the contribution to the conductance of the junction. Systems based on composite amorphous silicon/silicon oxide barriers were generated. By careful manipulation of the symmetry of such structures situations were created where transport was dominated either by classic direct tunneling or by resonant tunneling via localized states in the a-Si. Those junctions which were dominated by resonant tunneling were then studied comprehensively as a function of temperature and junction bias voltage. In general the author find that localized states in all real tunnel barriers can contribute considerably to the tunneling conductance, and can strongly influence the form of the I-V characteristic observed. Tunnel junctions were made on thin films of V-Ga and then examined as a function of alloy composition under various conditions. Conclusions were then drawn about the mechanism of superconductivity in this system.
- Authors:
- Publication Date:
- Research Org.:
- Stanford Univ., CA (USA)
- OSTI Identifier:
- 5276842
- Resource Type:
- Thesis/Dissertation
- Resource Relation:
- Other Information: Thesis (Ph. D.)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 36 MATERIALS SCIENCE; GALLIUM ALLOYS; SUPERCONDUCTIVITY; MIM JUNCTIONS; ELECTRICAL PROPERTIES; TUNNEL EFFECT; SEMICONDUCTOR JUNCTIONS; VANADIUM ALLOYS; SILICON; SILICON OXIDES; SUPERCONDUCTING JUNCTIONS; THIN FILMS; ALLOYS; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELEMENTS; FILMS; JUNCTIONS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMIMETALS; SILICON COMPOUNDS; 420800* - Engineering- Electronic Circuits & Devices- (-1989); 360603 - Materials- Properties; 360104 - Metals & Alloys- Physical Properties
Citation Formats
Bending, S J. Tunneling and transport via localized states in thin a-Si tunnel barriers and the application of these barriers in a tunneling study of superconducting V-Ga alloy films. United States: N. p., 1986.
Web.
Bending, S J. Tunneling and transport via localized states in thin a-Si tunnel barriers and the application of these barriers in a tunneling study of superconducting V-Ga alloy films. United States.
Bending, S J. 1986.
"Tunneling and transport via localized states in thin a-Si tunnel barriers and the application of these barriers in a tunneling study of superconducting V-Ga alloy films". United States.
@article{osti_5276842,
title = {Tunneling and transport via localized states in thin a-Si tunnel barriers and the application of these barriers in a tunneling study of superconducting V-Ga alloy films},
author = {Bending, S J},
abstractNote = {The goal of Part I of this thesis was to gain an understanding of real potential tunnel barriers in metal/insulator/metal tunnel junctions beyond the conventional average potential barrier' approximation used to describe them. In particular, it was hoped to understand the role of localized states in the tunnel barrier and the contribution to the conductance of the junction. Systems based on composite amorphous silicon/silicon oxide barriers were generated. By careful manipulation of the symmetry of such structures situations were created where transport was dominated either by classic direct tunneling or by resonant tunneling via localized states in the a-Si. Those junctions which were dominated by resonant tunneling were then studied comprehensively as a function of temperature and junction bias voltage. In general the author find that localized states in all real tunnel barriers can contribute considerably to the tunneling conductance, and can strongly influence the form of the I-V characteristic observed. Tunnel junctions were made on thin films of V-Ga and then examined as a function of alloy composition under various conditions. Conclusions were then drawn about the mechanism of superconductivity in this system.},
doi = {},
url = {https://www.osti.gov/biblio/5276842},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1986},
month = {Wed Jan 01 00:00:00 EST 1986}
}