The electronic properties of a-Si:H deposited with hydrogen or helium dilution
- Lawrence Berkeley National Lab., CA (United States)
- Univ. of Oregon, Eugene, OR (United States)
The authors have applied the Drive-Level Capacitance Profiling (DLCP) method to n-i-p a-Si:H diodes to characterize the mid-gap defect densities in the i layer. Their results show that there are no significant changes in the drive-level densities, N{sub dl}, in n-i-p diodes and p{sup +}-i-m as well as n-i-m Schottky diodes, which indicates that DLCP can directly provide reliable energy distribution and spatial distribution of the mid-gap defects in the n-i-p device. The authors have found that the ratio of N{sub dl} to N{sub D}*, the ionized defect density determined by hole onset measurement, is changed with the deposition conditions, it is 3 for standard samples, 2 for helium diluted samples and 6 for hydrogen diluted samples. These results indicate that there may be different defect distributions in these materials, which suggest the ratio of charged (D{sup {minus}}) density to the neutral defect (D{sup 0}) density may be altered when growth conditions are varied.
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States); National Renewable Energy Lab., Golden, CO (United States)
- OSTI ID:
- 527657
- Report Number(s):
- CONF-960401-; ISBN 1-55899-323-1; TRN: IM9741%%85
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
- Country of Publication:
- United States
- Language:
- English
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