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Title: Light-induced degradation of amorphous silicon-germanium alloy solar cells deposited at high rates

Abstract

The authors have studied the light-induced degradation of amorphous silicon-germanium (a-SiGe:H) alloy single-junction solar cells with high initial performance deposited at high rates. The intrinsic layers were deposited using microwave (MW) glow-discharge technique at deposition rates between 10 and 40 {angstrom}/s. The results show that light-induced degradation of the cells is higher than that of cells deposited at low rates using RF glow-discharge technique, and it does not strongly depend on deposition rates over this range. The total hydrogen content and the ratio of Si-H{sub 2}, Ge-H, and Ge-H{sub 2} to Si-H bonding estimated by infrared (IR) absorption in films are correlated with the cell degradation results. The authors have also investigated the effect of ion-bombardment on film properties. Films with low ion-bombardment are more porous and have higher composition of Si-H{sub 2} and Ge-H{sub 2} bonding. Appropriate ion-bombardment makes denser structure in a-SiGe:H alloy films deposited at high rates. This improves the cell performance as well.

Authors:
; ; ;  [1]
  1. United Solar Systems Corp., Troy, MI (United States)
Publication Date:
OSTI Identifier:
527634
Report Number(s):
CONF-960401-
ISBN 1-55899-323-1; TRN: IM9741%%62
Resource Type:
Book
Resource Relation:
Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; ENERGY BEAM DEPOSITION; ABSORPTIVITY; ELECTRICAL PROPERTIES; SILICON ALLOYS; GERMANIUM ALLOYS; SOLAR CELLS; ILLUMINANCE; PERFORMANCE; IONS; CHEMICAL ANALYSIS; CURRENT DENSITY; ELECTRIC POTENTIAL; EFFICIENCY; EXPERIMENTAL DATA

Citation Formats

Sugiyama, S, Xu, X, Yang, J, and Guha, S. Light-induced degradation of amorphous silicon-germanium alloy solar cells deposited at high rates. United States: N. p., 1996. Web.
Sugiyama, S, Xu, X, Yang, J, & Guha, S. Light-induced degradation of amorphous silicon-germanium alloy solar cells deposited at high rates. United States.
Sugiyama, S, Xu, X, Yang, J, and Guha, S. Tue . "Light-induced degradation of amorphous silicon-germanium alloy solar cells deposited at high rates". United States.
@article{osti_527634,
title = {Light-induced degradation of amorphous silicon-germanium alloy solar cells deposited at high rates},
author = {Sugiyama, S and Xu, X and Yang, J and Guha, S},
abstractNote = {The authors have studied the light-induced degradation of amorphous silicon-germanium (a-SiGe:H) alloy single-junction solar cells with high initial performance deposited at high rates. The intrinsic layers were deposited using microwave (MW) glow-discharge technique at deposition rates between 10 and 40 {angstrom}/s. The results show that light-induced degradation of the cells is higher than that of cells deposited at low rates using RF glow-discharge technique, and it does not strongly depend on deposition rates over this range. The total hydrogen content and the ratio of Si-H{sub 2}, Ge-H, and Ge-H{sub 2} to Si-H bonding estimated by infrared (IR) absorption in films are correlated with the cell degradation results. The authors have also investigated the effect of ion-bombardment on film properties. Films with low ion-bombardment are more porous and have higher composition of Si-H{sub 2} and Ge-H{sub 2} bonding. Appropriate ion-bombardment makes denser structure in a-SiGe:H alloy films deposited at high rates. This improves the cell performance as well.},
doi = {},
url = {https://www.osti.gov/biblio/527634}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {12}
}

Book:
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