The effect of hydrogen dilution near the p/i interface region of a-Si:H p-i-n solar cells
- Univ. of North Carolina, Chapel Hill, NC (United States). Dept. of Physics and Astronomy
- National Renewable Energy Lab., Golden, CO (United States)
It is known that the a-Si:H solar cell with H-diluted i-layer (p-i{sub H}-n) exhibits a better stability under AM1 light solar cell when inserting a thin H-diluted i-layer between the p- and the i-layer (p-i{sub H}-i-n) shows the same stability as a p-e{sub H}-n solar cell after 600 hours light soaking. It was suggested that the stabilization of a H-diluted a-Si:H solar cell is through controlling its p/i interface. In this work, the authors report the electroluminescence (EL) measurements of a-Si:H solar cells with p-i{sub H}-n, p-i{sub H}-i-n and p-i-n structures made in identical conditions except the difference in H-dilution processing. EL spectra in a wide range of temperature indicate that the defect-band emission can be controlled through a thin H-diluted i-layer near the p/i interface region, but the main-band emission depends more on the diluted i-layer thickness. According to the temperature dependence of the EL efficiency, the valence band-tail width of the active layer in the p-i{sub H}-i-n cell is estimated to be about 13% broader than that in the p-i{sub H}-n cell. From the total EL intensity as a function of the forward current density, the recombination processes at room temperature are suggested to be a monomolecular type for p-i{sub H}-n, p-i{sub H}-i-n, and p-i-n structures.
- Sponsoring Organization:
- National Renewable Energy Lab., Golden, CO (United States); USDOE, Washington, DC (United States)
- OSTI ID:
- 527617
- Report Number(s):
- CONF-960401-; ISBN 1-55899-323-1; TRN: IM9741%%45
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
- Country of Publication:
- United States
- Language:
- English
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