Efficiency improvement of a-Si solar cells deposited in a single chamber, large area, PECVD reactor
- ENEA Centro Ricerche, Portici (Italy)
In order to realize large area integrated a-Si modules using a commercial, single chamber, PECVD reactor, an accurate optimization of deposition process for p-i-n solar cell has been performed leading to a 1 cm{sup 2} device efficiency value of 10.3%. Besides the efficiency improvements achieved by the insertion of a graded layer at p/i interface and by the introduction of SnO{sub 2} Asahi type U substrate, an interface cleaning procedure, based on NF{sub 3} flushing step, was the key for the cells Voc and fill factor increase. Microcrystalline n{sup +} layer, ZnO/Ag back contact and device thermal annealing gave further contributions to the cell efficiency. Utilizing this technology, a large area p-i-n modules (900 cm{sup 2}) with an initial efficiency of 8.5% has been manufactured.
- OSTI ID:
- 527609
- Report Number(s):
- CONF-960401-; ISBN 1-55899-323-1; TRN: IM9741%%37
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
- Country of Publication:
- United States
- Language:
- English
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