Electron field emission characteristics of planar diamond film array synthesized by chemical vapor deposition process
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan 300, Republic of (China)
- Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan 300, Republic of (China)
Selected area deposition of diamond films on silicon substrates was successfully achieved using the patterned Pt layer as a nucleation inhibitor in the chemical vapor deposition process. The planar diamond film array thus made possesses good electron field emission properties, that is, emission current density of (J{sub e}){sub Si}=150{mu}A/cm{sup 2} (under 23.6 V/{mu}m) and turn on field of (E{sub o}){sub Si}=10V/{mu}m. Precoating a thin Au layer (20 nm) on a Si surface further increased the emission current density to (J{sub e}){sub Au/Si}=960{mu}A/cm{sup 2} (under 23.6 V/{mu}m) with (E{sub o}){sub Au/Si}=10V/{mu}m. The effective work functions ({phi}) estimated by Fowler{endash}Nordheim plots of the I{endash}V characteristics are ({phi}){sub Si}=0.059eV and ({phi}){sub Au/Si}=0.085eV. The emission properties of both planar diamond film arrays satisfy the requirement for applying as the electron emitters in the flat panel displays. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 526860
- Journal Information:
- Applied Physics Letters, Vol. 71, Issue 4; Other Information: PBD: Jul 1997
- Country of Publication:
- United States
- Language:
- English
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