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Title: Lattice engineered compliant substrate for defect-free heteroepitaxial growth

Abstract

Presented here is proof-of-principle that a thin single crystal semiconductor film{emdash}when twist-wafer bonded to a bulk single crystal substrate (of the same material){emdash}will comply to the lattice constant of a different single crystal semiconductor thick film grown on its surface. In our experiment, a 100 {Angstrom} film of GaAs was wafer bonded to a GaAs bulk substrate, with a large twist angle between their {l_angle}110{r_angle} directions. The resultant twist boundary ensures high flexibility in the thin film. Dislocation-free films of In{sub 0.35}Ga{sub 0.65}P({approximately}1{percent} strain) were grown with thicknesses of 3000 {Angstrom}, thirty times the Matthews{endash}Blakeslee critical thickness, on twist-wafer-bonded films of GaAs. {copyright} {ital 1997 American Institute of Physics.}

Authors:
; ;  [1]; ;  [2]
  1. School of Electrical Engineering, Cornell University, Ithaca, New York 14853 (United States)
  2. Department of Semiconductor Materials, Sandia National Laboratories, MS 0603, Albuquerque, New Mexico 87185-0603 (United States)
Publication Date:
OSTI Identifier:
526484
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 70; Journal Issue: 13; Other Information: PBD: Mar 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM PHOSPHIDES; EPITAXY; INDIUM PHOSPHIDES; SUBSTRATES; HETEROJUNCTIONS; THIN FILMS; LATTICE PARAMETERS; CRYSTAL GROWTH; THICKNESS; DISLOCATIONS; GALLIUM ARSENIDES; wafer bonding; twist boundaries

Citation Formats

Ejeckam, F E, Lo, Y H, Subramanian, S, Hou, H Q, and Hammons, B E. Lattice engineered compliant substrate for defect-free heteroepitaxial growth. United States: N. p., 1997. Web. doi:10.1063/1.118669.
Ejeckam, F E, Lo, Y H, Subramanian, S, Hou, H Q, & Hammons, B E. Lattice engineered compliant substrate for defect-free heteroepitaxial growth. United States. https://doi.org/10.1063/1.118669
Ejeckam, F E, Lo, Y H, Subramanian, S, Hou, H Q, and Hammons, B E. Sat . "Lattice engineered compliant substrate for defect-free heteroepitaxial growth". United States. https://doi.org/10.1063/1.118669.
@article{osti_526484,
title = {Lattice engineered compliant substrate for defect-free heteroepitaxial growth},
author = {Ejeckam, F E and Lo, Y H and Subramanian, S and Hou, H Q and Hammons, B E},
abstractNote = {Presented here is proof-of-principle that a thin single crystal semiconductor film{emdash}when twist-wafer bonded to a bulk single crystal substrate (of the same material){emdash}will comply to the lattice constant of a different single crystal semiconductor thick film grown on its surface. In our experiment, a 100 {Angstrom} film of GaAs was wafer bonded to a GaAs bulk substrate, with a large twist angle between their {l_angle}110{r_angle} directions. The resultant twist boundary ensures high flexibility in the thin film. Dislocation-free films of In{sub 0.35}Ga{sub 0.65}P({approximately}1{percent} strain) were grown with thicknesses of 3000 {Angstrom}, thirty times the Matthews{endash}Blakeslee critical thickness, on twist-wafer-bonded films of GaAs. {copyright} {ital 1997 American Institute of Physics.}},
doi = {10.1063/1.118669},
url = {https://www.osti.gov/biblio/526484}, journal = {Applied Physics Letters},
number = 13,
volume = 70,
place = {United States},
year = {1997},
month = {3}
}