Lattice engineered compliant substrate for defect-free heteroepitaxial growth

doi:https://doi.org/10.1063/1.118669

Title: Lattice engineered compliant substrate for defect-free heteroepitaxial growth

Full Record
Other Related Research

Abstract

Presented here is proof-of-principle that a thin single crystal semiconductor film{emdash}when twist-wafer bonded to a bulk single crystal substrate (of the same material){emdash}will comply to the lattice constant of a different single crystal semiconductor thick film grown on its surface. In our experiment, a 100 {Angstrom} film of GaAs was wafer bonded to a GaAs bulk substrate, with a large twist angle between their {l_angle}110{r_angle} directions. The resultant twist boundary ensures high flexibility in the thin film. Dislocation-free films of In{sub 0.35}Ga{sub 0.65}P({approximately}1{percent} strain) were grown with thicknesses of 3000 {Angstrom}, thirty times the Matthews{endash}Blakeslee critical thickness, on twist-wafer-bonded films of GaAs. {copyright} {ital 1997 American Institute of Physics.}

Authors:

Ejeckam, F E; Lo, Y H; Subramanian, S ^[1]; Hou, H Q; Hammons, B E ^[2]

School of Electrical Engineering, Cornell University, Ithaca, New York 14853 (United States)
Department of Semiconductor Materials, Sandia National Laboratories, MS 0603, Albuquerque, New Mexico 87185-0603 (United States)

Publication Date:: 1997-03-01

OSTI Identifier:: 526484

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 70; Journal Issue: 13; Other Information: PBD: Mar 1997

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; GALLIUM PHOSPHIDES; EPITAXY; INDIUM PHOSPHIDES; SUBSTRATES; HETEROJUNCTIONS; THIN FILMS; LATTICE PARAMETERS; CRYSTAL GROWTH; THICKNESS; DISLOCATIONS; GALLIUM ARSENIDES; wafer bonding; twist boundaries

Citation Formats


                    Ejeckam, F E, Lo, Y H, Subramanian, S, Hou, H Q, and Hammons, B E. Lattice engineered compliant substrate for defect-free heteroepitaxial growth.  United States: N. p., 1997. 
        Web.  doi:10.1063/1.118669.

Copy to clipboard


                    Ejeckam, F E, Lo, Y H, Subramanian, S, Hou, H Q, & Hammons, B E. Lattice engineered compliant substrate for defect-free heteroepitaxial growth.  United States.  https://doi.org/10.1063/1.118669

Copy to clipboard


                    Ejeckam, F E, Lo, Y H, Subramanian, S, Hou, H Q, and Hammons, B E. Sat .  
        "Lattice engineered compliant substrate for defect-free heteroepitaxial growth".  United States.  https://doi.org/10.1063/1.118669.

Copy to clipboard


                    
@article{osti_526484,

  title        = {Lattice engineered compliant substrate for defect-free heteroepitaxial growth},

  author       = {Ejeckam, F E and Lo, Y H and Subramanian, S and Hou, H Q and Hammons, B E},

  abstractNote = {Presented here is proof-of-principle that a thin single crystal semiconductor film{emdash}when twist-wafer bonded to a bulk single crystal substrate (of the same material){emdash}will comply to the lattice constant of a different single crystal semiconductor thick film grown on its surface. In our experiment, a 100 {Angstrom} film of GaAs was wafer bonded to a GaAs bulk substrate, with a large twist angle between their {l_angle}110{r_angle} directions. The resultant twist boundary ensures high flexibility in the thin film. Dislocation-free films of In{sub 0.35}Ga{sub 0.65}P({approximately}1{percent} strain) were grown with thicknesses of 3000 {Angstrom}, thirty times the Matthews{endash}Blakeslee critical thickness, on twist-wafer-bonded films of GaAs. {copyright} {ital 1997 American Institute of Physics.}},

  doi          = {10.1063/1.118669},

  url          = {https://www.osti.gov/biblio/526484},
  journal      = {Applied Physics Letters},
number       = 13,

  volume       = 70,

  place        = {United States},

  year         = {1997},

  month        = {3}

}

Copy to clipboard

Journal Article:

https://doi.org/10.1063/1.118669

Other availability

Find in Google Scholar

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Similar records in OSTI.GOV collections:

Magnetic and structural properties of epitaxially grown FeTaN thin films

Journal Article Varga, L ; Jiang, H ; Klemmer, T J ; ... - Journal of Applied Physics

Epitaxial FeTaN films ({approximately}1500 {Angstrom}) were grown as a function of nitrogen flow rate on epitaxial Cu(001) buffer layers ({approximately}2000 {Angstrom}) on Si(001) single crystal substrates to investigate the effect of Ta and nitrogen on the magnetocrystalline anisotropy and magnetostriction. Detailed structural investigation by transmission electron microscopy and x-ray diffraction showed that the FeTaN films were epitaxial with the Pitsch orientation relationship of FeTaN(110){parallel}Cu(001) and FeTaN{l_angle}111{r_angle}{parallel}Cu{l_angle}110{r_angle}, which allows four different in-plane variants to coexist in the film. It was found that the saturation magnetization did not change with nitrogen addition ({approximately}1600 emu/cc) up to 2{percent} lattice dilation. The values ofmore »« less
https://doi.org/10.1063/1.367460
Dislocation-free InSb grown on GaAs compliant universal substrates

Journal Article Ejeckam, F E ; Seaford, M L ; Lo, Y ; ... - Applied Physics Letters

An innovative compliant GaAs substrate was formed by wafer bonding a 30 {Angstrom} GaAs layer to a bulk GaAs crystal with a large angular misalignment inserted about their common normals. InSb epitaxial layers, which is about 15{percent} lattice mismatched to GaAs, have been grown on both compliant substrates and conventional GaAs substrates. Transmission electron microscopy studies showed that the InSb films grown on the compliant substrates have no measurable threading dislocations, whereas the InSb films on the conventional GaAs substrates exhibited dislocation densities as high as 10{sup 11}cm{sup {minus}2}. The observations made here suggest that the defect-free heteroepitaxial growth ofmore »« less
https://doi.org/10.1063/1.119642
High-coercivity, c-axis oriented Nd{sub 2}Fe{sub 14}B films grown by molecular beam epitaxy

Journal Article Keavney, D J ; Fullerton, E E ; Pearson, J E ; ... - Journal of Applied Physics

Thin films of Nd{sub 2}Fe{sub 14}B with a c-axis orientation and bulklike magnetic properties have been grown via molecular beam epitaxy with thicknesses as low as 300 {Angstrom}. The films are grown on single-crystal MgO(100) wafers overcoated with epitaxial Mo(100) buffer layers. The 2{endash}14{endash}1 phase is crystallized either by sequential deposition or codeposition of Fe, Nd, and B from pure elemental evaporation sources onto 600{endash}700{degree}C substrates. The structure of each film was characterized {ital in situ} with reflection high-energy electron diffraction and {ital ex situ} with x-ray diffraction. For the sequentially deposited films, the in-plane saturation field is 60{endash}70 kOemore »« less
https://doi.org/10.1063/1.364969
Evolution of surface roughness in epitaxial Si{sub 0.7}Ge{sub 0.3}(001) as a function of growth temperature (200{endash}600{degree}C) and Si(001) substrate miscut

Journal Article Lee, N ; Cahill, D G ; Greene, J E - Journal of Applied Physics

Evolution of surface roughness in epitaxial Si{sub 0.7}Ge{sub 0.3} alloys grown on Si(001) as a function of temperature (200-600 C), thickness ({ital t}=7.5-100 nm), and substrate miscut were investigated by atomic force microscopy and quantified in terms of the height-difference correlation function {ital G}({rho}), in which {rho} is lateral distance and [{ital G}({rho}{r_arrow}{infinity})]{sup 1/2} is proportional to the surface width. The films were deposited by ultrahigh vacuum ion-beam sputter deposition at 0.1 nms{sup {minus}1}. Strain-induced surface roughening was found to dominate in alloys grown on singular Si(001) substrates at {ital T}{sub {ital s}}{approx_gt}450{degree}C where [{ital G}({rho}{r_arrow}{infinity})]{sup 1/2} initially increases withmore »« less
https://doi.org/10.1063/1.363113
High-efficiency thin-film GaAs solar cells: Phase II. Final report

Technical Report Yeh, Y C.M.

The feasibility of producing high-efficiency (15% or greater) thin-film gallium arsenide (GaAs) solar cells with costs suitable for terrestrial power generation was demonstrated by growing thin epi-GaAs films on suitably prepared low-cost substrates to replace the expensive single-crystal GaAs wafers used conventionally. These substrates are made of either recrystallized-Ge films previously deposited on metal substrates of epi-Ge films grown by cheimcal vapor deposition (CVD) on low-cost, low-grade single-crystal Si substrates. Thin GaAs epi layers with good crystallographic quality having been grown using a (100) Si-substrate on which a thin Ge epi-interlayer has first been grown by CVD from germane. Bothmore »« less
https://doi.org/10.2172/6603182

Full Text Available

Similar Records