Lateral dopant profiling in semiconductors by force microscopy using capacitive detection
- T. J. Watson Research Center, Yorktown Heights, NY (United States)
Recently, high-resolution mapping of dopant concentration has been demonstrated with the scanning capacitance microscope (SCM). Here, the authors demonstrate that a similar measurement can be made with the atomic force microscope using the previously demonstrated capacitive force sensing mode. By applying appropriate bias to the force tip, depletion-induced capacitive variation is mapped over regions of varying dopant density. This method has a predicted sensitivity comparable to the SCM, and in addition allows imaging of trapped charge, as well as an independent measurement of the surface topography. Results of first-order model calculations are presented which give estimates as to the limits in sensitivity and resolution of this method.
- OSTI ID:
- 5261995
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:2; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
DOPED MATERIALS
NONDESTRUCTIVE ANALYSIS
CAPACITANCE
COMPARATIVE EVALUATIONS
MATHEMATICAL MODELS
MEASURING METHODS
MICROSCOPY
MICROSTRUCTURE
QUANTITY RATIO
SEMICONDUCTOR MATERIALS
SPATIAL RESOLUTION
TOPOGRAPHY
CHEMICAL ANALYSIS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
EVALUATION
MATERIALS
PHYSICAL PROPERTIES
RESOLUTION
400102* - Chemical & Spectral Procedures