Random telegraph signals in small gate-area p-MOS transistors

Conference · Tue Aug 10 00:00:00 EDT 1993 · AIP Conference Proceedings (American Institute of Physics); (United States)

DOI:https://doi.org/10.1063/1.44673· OSTI ID:5258039

Scofield, J H; Borland, N ^[1]; Fleetwood, D M ^[2]

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1. Department of Physics, Oberlin College, Oberlin, Ohio 44074 (United States)
2. Sandia National Laboratories, Dept. 1332, Albuquerque, New Mexico 87185-5800 (United States)

We report the observation of random telegraph signals (RTS) in the channel resistances of nominally 1.25 [mu]m[times]1.25 [mu]m, enhancement-mode pMOS transistors fabricated using the AT T 1-[mu]m radiation hardened technology. Devices were operated in strong inversion in the linear regime. Measurements, performed for temperatures ranging from 77 to 300 K and various gate voltages, show that capture and emission times are both thermally activated and that the capture time depends strongly on the gate voltage. Results suggest that the unfilled trap is charged and that, after capturing a hole, the trap relaxes to a lower energy. Basic features of a model are discussed.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5258039
• Report Number(s): CONF-930866-; CODEN: APCPCS; TRN: 94-005384
• Journal Information: AIP Conference Proceedings (American Institute of Physics); (United States), Vol. 285:1; Conference: 12. international conference on noise in physical systems and 1/f fluctuations, St. Louis, MO (United States), 16-20 Aug 1993; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
MOS TRANSISTORS
NOISE
MILLI HZ RANGE
P-TYPE CONDUCTORS
RADIATION HARDENING
SILICON
SILICON OXIDES
SPECTRAL DENSITY
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
CHALCOGENIDES
ELEMENTS
FREQUENCY RANGE
FUNCTIONS
HARDENING
HZ RANGE
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON COMPOUNDS
SPECTRAL FUNCTIONS
TEMPERATURE RANGE
TRANSISTORS
665000* - Physics of Condensed Matter- (1992-)