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Title: Stable and unstable growth in molecular beam epitaxy

Abstract

We consider the growth of films by molecular beam epitaxy in the presence of step-edge (Schwoebel) barriers using numerical simulation and experiments. We show that the growth of a singular surface is unstable, but that a miscut above a certain critical slope (which depends on growth conditions) leads to stable growth in a step-flow mode. For singular surfaces the instability gives rise to the formation of large mounded structures on the surface for which the slope is in the stable regime. We identify these in GaAs epitaxy using atomic force and scanning tunneling microscopy. We propose a continuum equation which exhibits these features.

Authors:
; ; ; ; ; ;  [1]
  1. The Harrison M. Randall Laboratory, University of Michigan, Ann Arbor, Michigan 48109-1120 (United States)
Publication Date:
OSTI Identifier:
5252194
DOE Contract Number:  
FG02-85ER45189
Resource Type:
Journal Article
Journal Name:
Physical Review Letters; (United States)
Additional Journal Information:
Journal Volume: 72:1; Journal ID: ISSN 0031-9007
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; STABILITY; MICROSTRUCTURE; MONTE CARLO METHOD; MORPHOLOGY; NUMERICAL ANALYSIS; STATISTICAL MECHANICS; ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; EPITAXY; GALLIUM COMPOUNDS; MATHEMATICS; MECHANICS; PNICTIDES; 360601* - Other Materials- Preparation & Manufacture; 661300 - Other Aspects of Physical Science- (1992-)

Citation Formats

Johnson, M D, Orme, C, Hunt, A W, Graff, D, Sudijono, J, Sander, L M, and Orr, B G. Stable and unstable growth in molecular beam epitaxy. United States: N. p., 1994. Web. doi:10.1103/PhysRevLett.72.116.
Johnson, M D, Orme, C, Hunt, A W, Graff, D, Sudijono, J, Sander, L M, & Orr, B G. Stable and unstable growth in molecular beam epitaxy. United States. doi:10.1103/PhysRevLett.72.116.
Johnson, M D, Orme, C, Hunt, A W, Graff, D, Sudijono, J, Sander, L M, and Orr, B G. Mon . "Stable and unstable growth in molecular beam epitaxy". United States. doi:10.1103/PhysRevLett.72.116.
@article{osti_5252194,
title = {Stable and unstable growth in molecular beam epitaxy},
author = {Johnson, M D and Orme, C and Hunt, A W and Graff, D and Sudijono, J and Sander, L M and Orr, B G},
abstractNote = {We consider the growth of films by molecular beam epitaxy in the presence of step-edge (Schwoebel) barriers using numerical simulation and experiments. We show that the growth of a singular surface is unstable, but that a miscut above a certain critical slope (which depends on growth conditions) leads to stable growth in a step-flow mode. For singular surfaces the instability gives rise to the formation of large mounded structures on the surface for which the slope is in the stable regime. We identify these in GaAs epitaxy using atomic force and scanning tunneling microscopy. We propose a continuum equation which exhibits these features.},
doi = {10.1103/PhysRevLett.72.116},
journal = {Physical Review Letters; (United States)},
issn = {0031-9007},
number = ,
volume = 72:1,
place = {United States},
year = {1994},
month = {1}
}