Performance of a new monolithic eight channel charge sensitive preamplifier-shaper
Abstract
A monolithic eight channel CMOS time-invariant preamplifier/shaper has been designed and built by Chuck Britton of ORNL in collaboration with Ray Yarema and Tom Zimmerman of Fermilab. Each of the eight channels incorporates a charge sensitive preamplifier and two shaping stages. The resultant weighting function is similar to CR-RC{sup 3}. The peaking time is approximately 200 ns, and the charge gain approximately in the range of 50--70 mv/fc. The layout was done on a Tinychip pad frame and the device was fabricated in a 2{mu} P-well process by Orbit. Figure 1 shows the chip layout. The channels are on an 84{mu} pitch to fit on a Tinychip without folding the layout. The design can be easily expanded to a larger number of channels. This paper describes results of tests performed on this device at Fermilab. The tests were done with a bare die which was directly wirebonded to a printed circuit board. This minimizes parasitic effects which can become significant when using large packages. Results may be somewhat different when using the standard 40 pin package. 6 figs.
- Authors:
- Publication Date:
- Research Org.:
- Fermi National Accelerator Lab., Batavia, IL (United States)
- Sponsoring Org.:
- USDOE; USDOE, Washington, DC (United States)
- OSTI Identifier:
- 5232709
- Report Number(s):
- FNAL-TM-1754
ON: DE92000599
- DOE Contract Number:
- AC02-76CH03000
- Resource Type:
- Technical Report
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; PREAMPLIFIERS; DESIGN; PERFORMANCE; MOS TRANSISTORS; PULSE SHAPERS; TRANSISTOR AMPLIFIERS; AMPLIFIERS; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; PULSE CIRCUITS; SEMICONDUCTOR DEVICES; SIGNAL CONDITIONERS; TRANSISTORS; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)
Citation Formats
Zimmerman, T. Performance of a new monolithic eight channel charge sensitive preamplifier-shaper. United States: N. p., 1991.
Web. doi:10.2172/5232709.
Zimmerman, T. Performance of a new monolithic eight channel charge sensitive preamplifier-shaper. United States. doi:10.2172/5232709.
Zimmerman, T. Thu .
"Performance of a new monolithic eight channel charge sensitive preamplifier-shaper". United States.
doi:10.2172/5232709. https://www.osti.gov/servlets/purl/5232709.
@article{osti_5232709,
title = {Performance of a new monolithic eight channel charge sensitive preamplifier-shaper},
author = {Zimmerman, T.},
abstractNote = {A monolithic eight channel CMOS time-invariant preamplifier/shaper has been designed and built by Chuck Britton of ORNL in collaboration with Ray Yarema and Tom Zimmerman of Fermilab. Each of the eight channels incorporates a charge sensitive preamplifier and two shaping stages. The resultant weighting function is similar to CR-RC{sup 3}. The peaking time is approximately 200 ns, and the charge gain approximately in the range of 50--70 mv/fc. The layout was done on a Tinychip pad frame and the device was fabricated in a 2{mu} P-well process by Orbit. Figure 1 shows the chip layout. The channels are on an 84{mu} pitch to fit on a Tinychip without folding the layout. The design can be easily expanded to a larger number of channels. This paper describes results of tests performed on this device at Fermilab. The tests were done with a bare die which was directly wirebonded to a printed circuit board. This minimizes parasitic effects which can become significant when using large packages. Results may be somewhat different when using the standard 40 pin package. 6 figs.},
doi = {10.2172/5232709},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Aug 01 00:00:00 EDT 1991},
month = {Thu Aug 01 00:00:00 EDT 1991}
}
-
A fully integrated, monolithic, cryogenic charge sensitive preamplifier using N-channel JFETs and polysilicon resistors
In this paper, an integrated charge preamplifier to be used with small (10--30 mm[sup 2]) Si(Li) and Ge(Li) X-ray detectors is described. The preamplifier is designed to operate at cryogenic temperatures ([approximately]100 K to 160 K) for the best performance. An N-channel JFET process technology for integrated charge sensitive preamplifiers has been developed. The process integrates multiple pinch-off voltage JFETs fabricated in an n-type epitaxial layer on a low resistivity p-type substrate. The process also incorporates polysilicon resistors integrated on the same die as the JFETs. The optimized polysilicon resistors exhibit 1/f noise nearly as good as metal film resistorsmore » -
Monolithic, radiation hard charge sensitive preamplifier using diffused N-channel junction field effect transistors
This paper reports on a monlithic preamplifier based on epitaxial channel, diffused gate N-JFETs designed and investigated by means of SPICE simulation and breadboard implementation. Integration of the circuit is now in progress on the base of the technological processes that expected to retain the characteristics of noise and radiation tolerance that these JFETs feature as discrete devices.